HYG800P10LR1D P Channel Enhancement Mode MOSFET with TO 252 2L Package and 75 Watt Power Dissipation
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HYG800P10LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters and load switching. It offers robust performance with a -100V drain-source voltage, -20A continuous drain current, and low on-resistance (RDS(ON) of 77m typ. at VGS = -10V). This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green versions, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=-10V | RDS(ON) (m) @ VGS=-4.5V | ISM (A) | PD (W) @ Tc=25C | EAS (mJ) L=0.3mH |
| HYG800P10LR1D | TO-252-2L | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
| HYG800P10LR1U | TO-251-3L | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
| HYG800P10LR1V | TO-251-3S | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
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