Power Semiconductor HXY MOSFET IGW40N65F5-HXY with 650V Collector Emitter Voltage and 70A Collector Current
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Product Description
Product Overview
The IGW40N65F5 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IGW40N65F5
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Value | Units |
| Absolute Maximum Ratings | ||||
| VCE | Collector emitter voltage | 650 | V | |
| IC | DC collector current | TC = 25C | 70 | A |
| IC | DC collector current | TC = 100C | 40 | A |
| ICM | Pulsed collector current | TC = 25C | 160 | A |
| IF | Maximum Diode forward current | TC = 25C | 70 | A |
| IF | Maximum Diode forward current | TC = 100C | 40 | A |
| IFM | Diode pulsed current | TC = 25C | 160 | A |
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V |
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V |
| Ptot | Power Dissipation | TC = 25C | 250 | W |
| Ptot | Power Dissipation | TC = 100C | 125 | W |
| TVJ | Operating Junction Temperature Range | -40 to +175 | C | |
| TSTG | Storage Temperature Range | -55 to +150 | C | |
| Thermal Resistance | ||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.6 | C/W |
| RJC | Diode Thermal resistance: junction - case | Diode | 0.65 | C/W |
| Electrical Characteristics | ||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | - 1.6 2.1 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | - 1.85 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | - 1.95 | V |
| VF | Diode forward voltage | VGE = 0V , IC =40A | - 1.8 | V |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | - 1.5 | V |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | - 1.35 | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 4 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - - 40 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - - 100 | nA |
| gfs | Transconductance | VGE =15V, IC = 40A | - 55 - | S |
| Dynamic Characteristics | ||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - 1520 - | pF |
| Coes | Output Capacitance | - 110 - | pF | |
| Cres | Reverse Transfer Capacitance | - 11 - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 40A | - 57 - | nC |
| Qge | Gate to Emitter charge | - 6.5 - | nC | |
| Qgc | Gate to Collector charge | - 17.5 - | nC | |
| Switching Characteristics | ||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V, IC= 40A, RG(on) =15,RG(off) =15 | - 26 - | ns |
| tr | Turn-On Rise Time | - 28 - | ns | |
| td(off) | Turn-Off DelayTime | - 136 - | ns | |
| tf | Turn-Off Fall Time | - 34 - | ns | |
| Eon | Turn-on energy | - 0.9 - | mJ | |
| Eoff | Turn-off energy | - 0.43 - | mJ | |
| Ets | Total switching energy | - 1.33 - | mJ | |
| Diode Recovery Characteristics | ||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | - 56 - | ns |
| Qrr | Reverse recovery charge | - 0.27 - | mC | |
| Irrm | Peak reverse recovery current | - 8.0 - | A | |
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