N Channel Enhancement Mode MOSFET HUAYI HY3906B with 60 Volt 190 Amp Power Management Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 60V/190A rating and low on-resistance (RDS(ON) = 4.0m typ. @ VGS=10V). This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It has undergone 100% avalanche testing, ensuring robust operation.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
- Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate. Green products are lead-free (RoHS compliant) and halogen-free.
Technical Specifications
| Model | Package Type | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) (m) @ VGS=10V | Gate-Source Voltage (V) | Max. Junction Temperature (C) | Power Dissipation (W) |
| HY3906P/B | TO-263-2L | 60 | 190 (TC=25C) / 128 (TC=100C) | 4.0 (typ.) | 25 | 175 | 220 (TC=25C) / 110 (TC=100C) |
| HY3906P/B | TO-220FB-3L | 60 | 190 (TC=25C) / 128 (TC=100C) | 4.0 (typ.) | 25 | 175 | 220 (TC=25C) / 110 (TC=100C) |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina