IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications
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Product Description
Product Overview
The IKW40N120CH7XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, such as motor drives and onboard chargers (OBC).
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient |
| Package Type | TO-247 | ||
| Device Per Unit | 30 | Tube | Quantity |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina