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60 Volt 66 Amp N Channel MOSFET HUAYI HY1606B for Power Management and Switching Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The HY1606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications, particularly in inverter systems. It offers a robust and reliable performance with a 60V/66A rating and low on-state resistance. Available in lead-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Material: Lead Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, J-STD-020

Technical Specifications

ModelParameterRatingUnitConditions
HY1606P/BDrain-Source Voltage (VDSS)60V
Gate-Source Voltage (VGSS)±25V
Maximum Junction Temperature (TJ)175°C
Storage Temperature Range (TSTG)-55 to 175°C
Continuous Drain Current (ID)66ATC=25°C
Continuous Drain Current (ID)50ATC=100°C
Maximum Power Dissipation (PD)88WTC=25°C
Maximum Power Dissipation (PD)44WTC=100°C
HY1606P/BDrain-Source Breakdown Voltage (BVDSS)60VVGS=0V, IDS=250µA
Zero Gate Voltage Drain Current (IDSS)1µAVDS=60V, VGS=0V, TJ=85°C
Gate Threshold Voltage (VGS(th))2 to 4VVDS=VGS, IDS=250µA
Gate Leakage Current (IGSS)±100nAVGS=±25V, VDS=0V
Drain-Source On-state Resistance (RDS(ON))10.4 (typ.)VGS=10V, IDS=33A
Drain-Source On-state Resistance (RDS(ON))12.5VGS=10V, IDS=33A
HY1606P/BDiode Forward Voltage (VSD)0.8 to 1VISD=33A, VGS=0V
Reverse Recovery Time (trr)33ns
Reverse Recovery Charge (Qrr)61nCISD=33A, dlSD/dt=100A/µs
HY1606P/BInput Capacitance (Ciss)2068pFVGS=0V, VDS=25V, Frequency=1.0MHz
Output Capacitance (Coss)764pFVGS=0V, VDS=25V, Frequency=1.0MHz
Reverse Transfer Capacitance (Crss)376pFVGS=0V, VDS=25V, Frequency=1.0MHz
Total Gate Charge (Qg)51nCVDS=48V, VGS=10V, IDS=33A

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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