Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and motor control circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BT134-800E is a glass-passivated triac in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. It is suitable for motor control, industrial and domestic lighting, heating, and static switching applications.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD
Origin: Shenzhen, China
Package: SOT-223-2L
Material: Plastic-Encapsulate
Marking: BT134-800E

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Maximum Ratings	VDRM /VRRM	(Ta=25C unless otherwise noted)	800	V
	Tj	Junction Temperature	-40 ~ 125	C
	Tstg	Storage Temperature	-40 ~ 150	C
Electrical Characteristics	IDRM,IRRM	VDRM=VRRM T =25 j C	0.8	mA
	VDRM=VRRM T =125 j C	0.8	mA
	VGM	Peak gate voltage	-	V
	PGM	Peak gate power	-	W
On-State Characteristics	IT(RMS)	RMS on-state current	16	A
	ITSM	Non repetitive surge peak on-state current t = 2ms T =25 j C	200	A
	I t	I t for fusing t = 10 ms	16	A s
	VTM	On-state voltage IT=2A,tp=380us	1.65	V
	I GT	Gate trigger current T2(+), G(+) VD=12V RL=100	10	mA
	V GT	Gate trigger voltage T2(-), G(+) VD=12V RL=100	2.5	V
	IH	Holding current V D=12V,IGT=100mA	30	mA
Commutation Characteristics	(dl/dt)c	Critical-rate of rise of commutation current A/ IG=2IGT tr100ns F=120Hz us	50	A/us
	dV/dt	Critical-rate of rise of commutating voltage VDM=V DRM T =125 j C	20	V/us
	t gt	Turn-on time ITM =16A ,VDM=V DRM VDM=67%V DRM(MA VDM=400V T =125 j C X) V/ IG =0.1A,dlG/dt=5A/uS	2	us