NPN RF Bipolar Transistor Infineon BFP740H6327 Designed for in Satellite and Multimedia Applications

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Product Description

Product Overview

The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless communication, satellite, multimedia, and ISM applications.

Product Attributes

Brand: Infineon
Technology: SiGe:C
Device Type: NPN RF bipolar transistor
Product Validation: Qualified for industrial applications according to JEDEC47/20/22.
ESD Sensitive: Yes

Technical Specifications

Parameter	Symbol	Values	Unit	Note or test condition
Absolute Maximum Ratings
Collector emitter voltage	VCEO	4.0	V	Open base, TA = 25 C
Collector emitter voltage	VCES	13	V	E-B short circuited
Collector base voltage	VCBO	13	V	Open emitter
Emitter base voltage	VEBO	1.2	V	Open collector
Base current	IB	4	mA
Collector current	IC	45	mA
Total power dissipation	Ptot	160	mW	TS 100 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 to 150	C
Thermal Characteristics
Junction - soldering point thermal resistance	RthJS	310	K/W
DC Characteristics
Collector emitter breakdown voltage	V(BR)CEO	4.0 / 4.7	V	IC = 1 mA, IB = 0, open base
Collector emitter leakage current	ICES	1 / 400	nA	VCE = 13 V, VBE = 0 / VCE = 5 V, VBE = 0, E-B short circuited
Collector base leakage current	ICBO	1 / 40	nA	VCB = 5 V, IE = 0, open emitter
Emitter base leakage current	IEBO	1 / 40	nA	VEB = 0.5 V, IC = 0, open collector
DC current gain	hFE	160 to 400		VCE = 3 V, IC = 25 mA, pulse measured
General AC Characteristics
Transition frequency	fT	44	GHz	VCE = 3 V, IC = 25 mA, f = 2 GHz
Collector base capacitance	CCB	0.08	pF	VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitance	CCE	0.35	pF	VCE = 3 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitance	CEB	0.45	pF	VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Frequency Dependent AC Characteristics (VCE = 3 V, ZS = ZL = 50 )
Parameter	Symbol	f = 450 MHz	f = 900 MHz	f = 1.5 GHz	f = 1.9 GHz	f = 2.4 GHz	f = 3.5 GHz	f = 5.5 GHz	Unit	Note or test condition
Maximum power gain	Gms	31.5	28	26	25	24	22	19.5	dB	IC = 15 mA
Minimum noise figure	NFmin	0.45	0.45	0.5	0.5	0.55	0.65	0.85	dB	IC = 6 mA
3rd order intercept point at output	OIP3	22	22.5	23	24.5	24.5	25.5	24.5	dBm	IC = 15 mA