switching MOSFET HUAYI HY1607P with 12 milliohm on state resistance at 10 volt gate source voltage
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HY1607 is a high-performance N-channel enhancement mode MOSFET designed for various switching applications. It offers avalanche tested reliability, a rugged construction, and is available in Lead-Free and RoHS compliant versions. Key applications include switching applications and power management for inverter systems.
Product Attributes
- Brand: HYNIX (implied by HY)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free (Green product definition)
Technical Specifications
| Model | Package Type | Drain-Source Voltage (VDSS) | Continuous Drain Current (ID) @ TC | On-State Resistance (RDS(ON)) @ VGS, ID | Max Power Dissipation (PD) @ TC | Ordering Information |
| HY1607 | TO-220FB-3L | 100V | 30A @ 25C | 12m @ 10V, 30A | 150W @ 25C | HY1607P |
| HY1607 | TO-263-2L | 100V | 30A @ 25C | 12m @ 10V, 30A | 150W @ 25C | HY1607B |
| HY1607 | TO-3PM-3S | 100V | 30A @ 25C | 12m @ 10V, 30A | 150W @ 25C | HY1607PS |
| HY1607 | TO-3PM-3L | 100V | 30A @ 25C | 12m @ 10V, 30A | 150W @ 25C | HY1607PL |
| HY1607 | TO-220MF-3L | 100V | 30A @ 25C | 12m @ 10V, 30A | 150W @ 25C | HY1607MF |
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