Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

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Product Description

Product Overview

The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling.

Product Attributes

Brand: Infineon Technologies
Package: SOT23
Certifications: Pb-free (RoHS compliant), AEC-Q101 available

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-emitter voltage	VCEO	12	V
Collector-emitter voltage	VCES	20	V
Collector-base voltage	VCBO	20	V
Emitter-base voltage	VEBO	2	V
Collector current	IC	65	mA
Base current	IB	5	mA
Total power dissipation	Ptot	450	mW	TS 60 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Thermal Resistance Junction - soldering point	RthJS	200	K/W
Collector-emitter breakdown voltage	V(BR)CEO	12	V	IC = 1 mA, IB = 0
Collector-emitter cutoff current	ICES	100	A	VCE = 20 V, VBE = 0
Collector-base cutoff current	ICBO	100	nA	VCB = 10 V, IE = 0
Emitter-base cutoff current	IEBO	1	A	VEB = 1 V, IC = 0
DC current gain	hFE	70 - 140	-	IC = 15 mA, VCE = 8 V, pulse measured
Transition frequency	fT	6 - 8	GHz	IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance	Ccb	0.37 - 0.57	pF	VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance	Cce	0.2	pF	VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance	Ceb	1.1	pF	VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure	NFmin	0.9 - 1.4	dB	IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum stable	Gms	17.5	dB	IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
Power gain, maximum available	Gma	11.5	dB	IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz
Transducer gain	\|S21e\|	14.5 - 9	dB	IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz