N Channel Enhancement Mode MOSFET HUAYI HY3704B with 120 Amp Continuous Drain Current at 100 Celsius
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested, ensuring robust performance.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (Lead Free Products)
Technical Specifications
| Feature | HY3704P/B |
|---|---|
| N-Channel Enhancement Mode MOSFET | Yes |
| Drain-Source Voltage (VDSS) | 40V |
| Continuous Drain Current (ID) @ TC=25C | 176A |
| Continuous Drain Current (ID) @ TC=100C | 120A |
| RDS(ON) typ. @ VGS=10V | 0.78 m |
| Gate-Source Voltage (VGS) | 20V |
| Maximum Junction Temperature (TJ) | 175C |
| Storage Temperature Range (TSTG) | -55 to 175C |
| Maximum Power Dissipation (PD) @ TC=25C | 192W |
| Maximum Power Dissipation (PD) @ TC=100C | 96W |
| Thermal Resistance-Junction to Case (RJC) | 0.78 C/W |
| Thermal Resistance-Junction to Ambient (RJA) | 62.5 C/W |
| Package Types | TO-220FB-3L, TO-263-2L |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0V (typ. 3.0V) |
| Input Capacitance (Ciss) | 4427 pF |
| Output Capacitance (Coss) | 1028 pF |
| Reverse Transfer Capacitance (Crss) | 538 pF |
| Total Gate Charge (Qg) | 122 nC |
| Gate-Source Charge (Qgs) | 29 nC |
| Gate-Drain Charge (Qgd) | 35 nC |
| Diode Forward Voltage (VSD) @ ISD=88A | 0.8 - 1.2V (typ. 0.8V) |
| Reverse Recovery Time (trr) | 28 ns |
| Reverse Recovery Charge (Qrr) | 51 nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina