SiGe C technology RF transistor Infineon BFP620H7764XTSA1 for wireless communication applications

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Product Description

Product Overview

The BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. This device provides cost competitiveness without compromising ease of use.

Product Attributes

Brand: Infineon
Technology: SiGe:C
Product Family: Sixth Generation RF Transistor
Certifications: Qualified for industrial applications according to JEDEC47/20/22
Sensitive Device: ESD sensitive, observe handling precautions

Technical Specifications

Parameter	Symbol	Values	Unit	Note or test condition
Minimum noise figure	NFmin	0.7	dB	at 1.8 GHz, 1.5 V, 5 mA
High gain (Transducer gain)	Gms \|S21\|	21.5	dB	at 1.8 GHz, 1.5 V, 50 mA
3rd order intercept point at output	OIP3	25.5	dBm	at 1.8 GHz, 2 V, 50 mA
Collector emitter breakdown voltage	V(BR)CEO	2.3 - 2.8	V	IC = 1 mA, IB = 0, open base
Collector emitter leakage current	ICES	10	A	VCE = 7.5 V, VBE = 0, E-B short circuited (max value limited by test cycle time)
Collector base leakage current	ICBO	1 - 40	nA	VCB = 5 V, IE = 0, open emitter (max value limited by test cycle time)
Emitter base leakage current	IEBO	10 - 900	nA	VEB = 0.5 V, IC = 0, open collector (max value limited by test cycle time)
DC current gain	hFE	110 - 270		VCE = 1.5 V, IC = 50 mA, pulse measured
Transition frequency	fT	65	GHz	VCE = 1.5 V, IC = 50 mA, f = 1 GHz
Collector base capacitance	CCB	0.12 - 0.2	pF	VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitance	CCE	0.22	pF	VCE = 2 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitance	CEB	0.46	pF	VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Minimum noise figure	NFmin	1.3	dB	at 6 GHz, 1.5 V, 5 mA
Power gain (Transducer gain)	Gms \|S21\|	9.5	dB	at 6 GHz, 1.5 V, 50 mA
Total power dissipation	Ptot	185	mW	TS 95 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 - 150	C