RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems

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Product Description

Infineon RF Transistors

Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.

Product Attributes

Brand: Infineon
Material: Silicon-germanium (SiGe) based on B9 technology
Origin: In-house process builds

Technical Specifications

Product Series/Generation	Key Features	Technical Benefits	Customer Benefits	Frequency Range	NFmin (dB)	fT (max) (GHz)	Gmax (dB)	OP1dB (dBm)	OIP3 (dBm)	Current Consumption (mA)	ESD Robustness
RF Transistors 7th Generation (B7HF)	Discrete Heterojunction Bipolar Transistors (HBT) for LNA solutions	Enhanced high-frequency characteristics, reduced parasitic capacitance	Increased RF link budget and SNR, wider coverage, higher order modulation support	450 MHz to 12 GHz	0.45 (sub-GHz) to 0.9 (5.5 GHz)	44	19 (at 10 GHz)	+8.5 (at 2.4 GHz)	+19 (at 2.4 GHz)	13 (at 2.4 GHz)	1.5 kV HBM
RF Transistors 8th Generation (B9HF)	Discrete Heterojunction Bipolar Transistors (HBT) for high-performance LNA solutions	Reduced parasitic capacitance, improved high-frequency characteristics	Increased RF link budget and SNR, support for very high throughput wireless specifications	(Not explicitly specified, but implied to be higher than 7th gen)	0.6 (at 5.5 GHz)	80	(Not explicitly specified, but implied to be higher than 7th gen)	(Not explicitly specified)	(Not explicitly specified)	(Not explicitly specified)	(Not explicitly specified)