Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency

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Product Description

Product Overview

The BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.

Product Attributes

Brand: Infineon Technologies
Product Name: BFP843
Product Type: Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Package: SOT343
Origin: Germany

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Description
Maximum Ratings
Collector-Emitter Voltage	VCEO			5	V	TA = 25 C
Collector-Base Voltage	VCBO			15	V	TA = 25 C
Emitter-Base Voltage	VEBO			2	V	TA = 25 C
Collector Current	IC			50	mA	TA = 25 C
Total Power Dissipation	Ptot			300	mW	TA = 25 C
Thermal Characteristics
Thermal Resistance Junction to Ambient	RthJA			333	K/W	SOT343
DC Characteristics
Collector-Emitter Saturation Voltage	VCE(sat)		0.3	0.5	V	IC = 20 mA, IB = 1 mA, TA = 25 C
DC Current Gain	hFE	30				VCE = 1.8 V, IC = 15 mA, TA = 25 C
Base-Emitter Saturation Voltage	VBE(sat)		0.7	0.9	V	IC = 20 mA, IB = 1 mA, TA = 25 C
General AC Characteristics
Current Gain - Bandwidth Product	fT		12		GHz	VCE = 1.8 V, IC = 15 mA, TA = 25 C
Collector-Emitter Breakdown Voltage	VCEO(sus)		5		V	IC = 1 mA, TA = 25 C
Noise Figure (5.5 GHz)	NF		0.8	1.2	dB	VCE = 1.8 V, IC = 8 mA, ZS = Zopt
Noise Figure (5.5 GHz)	NF		1.0	1.5	dB	VCE = 1.8 V, IC = 15 mA, ZS = Zopt
Maximum Available Gain (5.5 GHz)	MAG		16		dB	VCE = 1.8 V, IC = 15 mA
3rd Order Intercept Point (Output)	OIP3		35		dBm	VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz
1 dB Compression Point (Output)	OP1dB		17		dBm	VCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz