Switch Application N Channel MOSFET HUAYI HY045N10B with 4.2 Milliohm Resistance and 120 Amp Current
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features a 100V/120A rating with a low on-state resistance of 4.2m(typ.)@VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @Tc=25C | RDS(ON) (m) @VGS=10V | Application |
| HY045N10P | TO-220FB-3L | 100 | 120 | 4.2 (typ.) | Switch, DC/DC Converter |
| HY045N10B | TO-263-2L | 100 | 120 | 4.2 (typ.) | Switch, DC/DC Converter |
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