Industrial Grade Wideband NPN RF Transistor Infineon BFP720H6327XTSA1 Featuring High Gain and Low Noise Figures
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Product Description
Product Overview
The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise figures at elevated frequencies, significant gain, and excellent linearity (OIP3). This product is qualified for industrial applications according to JEDEC standards.
Product Attributes
- Brand: Infineon
- Material: SiGe:C
- Package: SOT343
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.0 | V | Open base |
| Collector emitter voltage | VCES | 13 | V | E-B short circuited |
| Collector base voltage | VCBO | 13 | V | Open emitter |
| Emitter base voltage | VEBO | 1.2 | V | Open collector |
| Base current | IB | 2 | mA | |
| Collector current | IC | 25 | mA | |
| Total power dissipation | Ptot | 100 | mW | TS 108 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 420 | K/W | |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4.0 - 4.7 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 30 | A | VCE = 13 V, VBE = 0, E-B short circuited (max) |
| Collector base leakage current | ICBO | 100 | nA | VCB = 5 V, IE = 0, open emitter (max) |
| Emitter base leakage current | IEBO | 2 | A | VEB = 0.5 V, IC = 0, open collector (max) |
| DC current gain | hFE | 160 - 400 | VCE = 3 V, IC = 13 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 45 | GHz | VCE = 3 V, IC = 13 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.06 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.35 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.35 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Frequency Dependent AC Characteristics (VCE = 3 V, TA = 25 C, ZS = ZL = 50 ) | ||||
| Parameter | Symbol | f = 150 MHz | f = 450 MHz | f = 900 MHz |
| Maximum power gain | Gms | 37.5 dB | 32.5 dB | 29.5 dB |
| Transducer gain | |S21| | 29.5 dB | 28.5 dB | 27.5 dB |
| Minimum noise figure | NFmin | 0.4 dB (IC=5mA) | 0.4 dB (IC=5mA) | 0.4 dB (IC=5mA) |
| Associated gain | Gass | 28.5 dB (IC=5mA) | 28 dB (IC=5mA) | 26 dB (IC=5mA) |
| 3rd order intercept point at output | OIP3 | 22 dBm (IC=13mA) | 21.5 dBm (IC=13mA) | 21 dBm (IC=13mA) |
| 1 dB gain compression point at output | OP1dB | 6 dBm (IC=13mA) | 5.5 dBm (IC=13mA) | 5.5 dBm (IC=13mA) |
| Parameter | Symbol | f = 1.5 GHz | f = 1.9 GHz | f = 2.4 GHz |
| Maximum power gain | Gms | 27.5 dB | 26 dB | |
| Transducer gain | |S21| | 25.5 dB | 24.5 dB | |
| Minimum noise figure | NFmin | 0.45 dB (IC=5mA) | 0.45 dB (IC=5mA) | |
| Associated gain | Gass | 24 dB (IC=5mA) | 23 dB (IC=5mA) | |
| 3rd order intercept point at output | OIP3 | 21.5 dBm (IC=13mA) | 22 dBm (IC=13mA) | |
| 1 dB gain compression point at output | OP1dB | 6 dBm (IC=13mA) | 7 dBm (IC=13mA) | |
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