100 volt 160 amp n channel enhancement mode mosfet HUAYI HYG042N10NS1P with rugged design and testing
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Negotiable
MOQ:
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Delivery Time:
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Product Description
HYG042N10NS1/B N-Channel Enhancement Mode MOSFET
The HYG042N10NS1/B is a 100V/160A N-Channel Enhancement Mode MOSFET designed for power switching applications and DC-DC converters. It features low on-resistance (RDS(ON)=3.5m typ. @ VGS = 10V), 100% avalanche testing, and a reliable, rugged design. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| IS | Source Current-Continuous (Body Diode) | TC=25°C, Mounted on Large Heat Sink | 160 | A | ||
| IDM | Pulsed Drain Current | TC=25°C | 520 | A | ||
| ID | Continuous Drain Current | TC=25°C | 160 | A | ||
| ID | Continuous Drain Current | TC=100°C | 113 | A | ||
| PD | Maximum Power Dissipation | TC=25°C | 200 | W | ||
| PD | Maximum Power Dissipation | TC=100°C | 100 | W | ||
| RθJC | Thermal Resistance, Junction-to-Case | 0.75 | °C/W | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board | 62.5 | °C/W | ||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | 650 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | 100 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=100V, VGS=0V | - | - | 1.0 | μA |
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | - | - | 50 | μA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V, IDS=50A | - | 3.5 | 4.2 | mΩ |
| VSD* | Diode Forward Voltage | ISD=50A, VGS=0V | - | 0.88 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=50A, dISD/dt=100A/μs | - | 70 | - | ns |
| Qrr | Reverse Recovery Charge | - | 146 | - | nC | |
| RG | Gate Resistance | VGS=0V, VDS=0V, F=1MHz | - | 2 | - | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1MHz | - | 7040 | - | pF |
| Coss | Output Capacitance | - | 2506 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 240 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=50V, RG=4Ω, IDS=50A, VGS=10V | - | 28 | - | ns |
| tr | Turn-on Rise Time | - | 97 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 76 | - | ns | |
| tf | Turn-off Fall Time | - | 93 | - | ns | |
| Qg | Total Gate Charge | VDS=80V, VGS=10V, ID=50A | - | 119 | - | nC |
| Qgs | Gate-Source Charge | - | 39 | - | nC | |
| Qgd | Gate-Drain Charge | - | 33 | - | nC | |
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Sellina