Power Management N Channel MOSFET HUAYI HYG420N06LR1D 60 Volt 22 Amp Low RDS ON for DC DC Conversion
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
HYG420N06LR1D/U/V N-Channel Enhancement Mode MOSFET
The HYG420N06LR1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications, including DC/DC conversion and synchronous rectification. It offers a 60V/22A rating with low on-resistance of 35m (typ.) at VGS = 10V and 44m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in RoHS compliant, Halogen-free, and Green device options.
Product Attributes
- Brand: HYG
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | Avalanche Energy (mJ) |
|---|---|---|---|---|---|---|
| HYG420N06LR1D | TO-252-2L | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
| HYG420N06LR1U | TO-251-3L | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
| HYG420N06LR1V | TO-251-3S | 60 | 22 | 35 (typ.) | 44 (typ.) | 23.5 (typ.) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina