Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications
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Product Description
Product Overview
The BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: Pb-free (RoHS compliant)
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Value | Unit | Note or Test Condition |
| Maximum collector-emitter voltage | VCEO | 15 | V | |
| Maximum collector current | IC | 25 | mA | |
| Noise figure | NF | 3.5 | dB | IC = 2 mA, VCE = 5 V, ZS = 50, f = 800 MHz |
| 3rd order output intercept point | OIP3 | 21.5 | dBm | VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt |
| 1 dB output compression point | P-1dB | 10 | dBm | IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz |
| Transition frequency | fT | 1.4 | GHz | IC = 2 mA, VCE = 5 V, f = 200 MHz |
| Maximum total power dissipation | Ptot | 280 | mW | TS 95 C |
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| DC current gain | hFE | 40 - 150 | IC = 2 mA, VCE = 1 V pulse measured | |
| Collector-emitter saturation voltage | VCEsat | 0.1 - 0.4 | V | IC = 10 mA, IB = 1 mA |
| Collector-base capacitance | Ccb | 0.55 - 0.8 | pF | VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Emitter-base capacitance | Ceb | 0.9 - 1.45 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
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