Silicon NPN Digital Transistor Infineon BCR108E6327HTSA1 Designed for Inverter and Interface Circuits

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Product Description

BCR108 Series NPN Silicon Digital Transistor

The BCR108 series are NPN silicon digital transistors designed for switching circuits, inverters, interface circuits, and driver circuits. They feature built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package, suitable for orientation in reels. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101 standards.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Certifications: RoHS compliant, AEC Q101

Technical Specifications

Parameter	BCR108	BCR108W	BCR108S	Unit
Collector-emitter voltage (VCEO)	50			V
Collector-base voltage (VCBO)	50			V
Input forward voltage (Vi(fwd))	20			V
Input reverse voltage (Vi(rev))	5			V
Collector current (IC)	100			mA
Total power dissipation (Ptot) at TS 102C	200			mW
Total power dissipation (Ptot) at TS 115C	250			mW
Total power dissipation (Ptot) at TS 124C	250			mW
Junction temperature (Tj)	150			C
Storage temperature (Tstg)	-65 ... 150			C
Junction - soldering point Thermal Resistance (RthJS)	240	105	140	K/W
Collector-emitter breakdown voltage (V(BR)CEO) at IC = 100 A, IB = 0	50			V
Collector-base breakdown voltage (V(BR)CBO) at IC = 10 A, IE = 0	50			V
Collector-base cutoff current (ICBO) at VCB = 40 V, IE = 0	100			nA
Emitter-base cutoff current (IEBO) at VEB = 5 V, IC = 0	164			A
DC current gain (hFE) at IC = 5 mA, VCE = 5 V	70	-	-	-
Collector-emitter saturation voltage (VCEsat) at IC = 10 mA, IB = 0.5 mA	0.3			V
Input off voltage (Vi(off)) at IC = 100 A, VCE = 5 V	0.4	-	0.8	V
Input on voltage (Vi(on)) at IC = 2 mA, VCE = 0.3 V	0.5	-	1.1	V
Input resistor (R1)	2.2			k
Resistor ratio (R1/R2)	0.047			-
Transition frequency (fT) at IC = 10 mA, VCE = 5 V, f = 1 MHz	170			MHz
Collector-base capacitance (Ccb) at VCB = 10 V, f = 1 MHz	2			pF