performance tuning diode Infineon BBY6502VH6327XTSA1 for low frequency control elements in mobile communication devices

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Product Description

Product Overview

The BBY65-02V is a high Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in mobile communications equipment. It is ideal for low frequency control elements such as TCXOS and VCXOS, offering a high capacitance ratio and good C-V linearity. This Pb-free (RoHS compliant) package component ensures reliable performance across a wide operating temperature range.

Product Attributes

Brand: Infineon Technologies
Package Type: SC79
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Type		BBY65-02V
Package		SC79
Configuration		single
Inductance (LS)	LS	0.6	nH
Marking		F
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage	VR	15	V
Forward current	IF	50	mA
Operating temperature range	Top	-55 ... 150	C
Storage temperature	Tstg	-55 ... 150	C
Electrical Characteristics at TA = 25C, unless otherwise specified
DC Characteristics
Reverse current (VR = 10 V)	IR	-	nA	min.
Reverse current (VR = 10 V, TA = 85 C)	IR	-	nA	typ.
Reverse current (VR = 10 V, TA = 85 C)	IR	100	nA	max.
AC Characteristics
Diode capacitance (VR = 0.3 V, f = 1 MHz)	CT	28.2	pF	min.
Diode capacitance (VR = 0.3 V, f = 1 MHz)	CT	29.5	pF	typ.
Diode capacitance (VR = 0.3 V, f = 1 MHz)	CT	30.8	pF	max.
Diode capacitance (VR = 1 V, f = 1 MHz)	CT	20.25	pF	typ.
Diode capacitance (VR = 2 V, f = 1 MHz)	CT	9.8	pF	typ.
Diode capacitance (VR = 3 V, f = 1 MHz)	CT	4.45	pF	typ.
Diode capacitance (VR = 4.7 V, f = 1 MHz)	CT	2.7	pF	typ.
Diode capacitance (VR = 4.7 V, f = 1 MHz)	CT	2.8	pF	max.
Capacitance ratio (VR = 0.3 V, VR = 4.7 V)	CT0.3/ CT4.7	10	-	min.
Capacitance ratio (VR = 0.3 V, VR = 4.7 V)	CT0.3/ CT4.7	10.9	-	typ.
Capacitance ratio (VR = 1 V, VR = 3 V)	CT1/CT3	4.55	-	typ.
Series resistance (VR = 1 V, f = 470 MHz)	rS	0.6		typ.
Series resistance (VR = 1 V, f = 470 MHz)	rS	0.9		max.