Highly insulated Infineon FZ250R65KE3 module with CTI greater than 600 and thermal cycling capability
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Product Description
Product Overview
Highly insulated module featuring Trench/Fieldstop IGBT3 and emitter controlled 3 diodes. This module offers electrical advantages such as a VCES of 6500 V and a low VCE,sat. Mechanical features include extended storage temperature down to -55 C, high creepage and clearance distances, a package with CTI > 600, and enhanced insulation of 10.4 kV AC for 60 seconds. The AlSiC base plate enhances thermal cycling capability. Suitable for medium-voltage converters and traction drives, this product is qualified for industrial applications according to relevant IEC standards.
Product Attributes
- Brand: Infineon
- Product Name: FZ250R65KE3
- Insulation: Enhanced insulation of 10.4 kV AC 60 s
- Base Plate Material: AlSiC
- CTI: > 600
- Certifications: Qualified for industrial applications according to IEC 60747, 60749, and 60068
Technical Specifications
| Parameter | Symbol | Note or test condition | Values Unit | Min. | Typ. | Max. |
| Collector-emitter voltage | VCES | Tvj = 25 C | 6500 V | |||
| Continuous DC collector current | ICDC | Tvj max = 150 C, TC = 80 C | 250 A | |||
| Repetitive peak collector current | ICRM | tP = 1 ms | 500 A | |||
| Collector-emitter saturation voltage | VCE sat | IC = 250 A, VGE = 15 V, Tvj = 25 C | 3.00 3.40 V | |||
| Gate threshold voltage | VGEth | IC = 35 mA, VCE = VGE, Tvj = 25 C | 5.40 6 6.60 V | |||
| Input capacitance | Cies | f = 1000 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 69 nF | |||
| Turn-on delay time (inductive load) | tdon | IC = 250 A, VCE = 3600 V, VGE = 15 V, RGon = 3 , Tvj = 25 C | 0.640 s | |||
| Turn-off delay time (inductive load) | tdoff | IC = 250 A, VCE = 3600 V, VGE = 15 V, RGoff = 20 , Tvj = 25 C | 7.300 s | |||
| Turn-on energy loss per pulse | Eon | IC = 250 A, VCE = 3600 V, L = 280 nH, VGE = 15 V, RGon = 3 , Tvj = 25 C | 1400 mJ | |||
| Turn-off energy loss per pulse | Eoff | IC = 250 A, VCE = 3600 V, L = 280 nH, VGE = 15 V, RGoff = 20 , Tvj = 25 C | 1200 mJ | |||
| Thermal resistance, junction to case | RthJC | per IGBT | 26.1 K/kW | |||
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 6500 V | |||
| Continuous DC forward current | IF | 250 A | ||||
| Repetitive peak forward current | IFRM | tP = 1 ms | 500 A | |||
| Forward voltage | VF | IF = 250 A, Tvj = 25 C | 3.00 3.50 V | |||
| Peak reverse recovery current | IRM | VR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C | 370 A | |||
| Recovered charge | Qr | VR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C | 290 C | |||
| Reverse recovery energy | Erec | VR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C | 470 mJ | |||
| Thermal resistance, junction to case | RthJC | per diode | 56.0 K/kW | |||
| Storage temperature | Tstg | -55 125 C | ||||
| Mounting torque for module mounting | M | M6, Screw | 4.25 5.75 Nm | |||
| Terminal connection torque | M | M8, Screw | 8 10 Nm | |||
| Weight | G | 500 g | ||||
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 60 s | 10.4 kV | |||
| Comparative tracking index | CTI | >600 |
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