Power Electronics Component Infineon IKA15N65F5 IGBT with Low Gate Charge and High Breakdown Voltage
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Product Description
Product Overview
The IKA15N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, low QG, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for applications such as solar converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKA15N65F5 | 650V | 14.0A | 1.6V | 175C | K15EF5 | PG-TO220-3 FP |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 15.0A, Tvj = 25C | 1.60 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.15mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 15.0A | 22.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 930 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 24 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 4 | pF |
| Gate charge | QG | VCC = 520V, IC = 15.0A, VGE = 15V | 38.0 | nC |
| Turn-on delay time (IGBT) | td(on) | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 17 | ns |
| Rise time (IGBT) | tr | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 7 | ns |
| Turn-off delay time (IGBT) | td(off) | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 150 | ns |
| Fall time (IGBT) | tf | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 16 | ns |
| Turn-on energy (IGBT) | Eon | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 0.13 | mJ |
| Turn-off energy (IGBT) | Eoff | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 0.04 | mJ |
| Total switching energy (IGBT) | Ets | Tvj = 25C, VCC = 400V, IC = 7.5A, RG = 39.0 | 0.17 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 7.5A, diF/dt = 1000A/s | 50 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 7.5A, diF/dt = 1000A/s | 0.19 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 7.5A, diF/dt = 1000A/s | 8.0 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 7.5A, diF/dt = 1000A/s | -190 | A/s |
| Collector-emitter voltage | VCE | - | 650 | V |
| DC collector current, limited by Tvjmax | IC | TC = 25C | 14.0 | A |
| DC collector current, limited by Tvjmax | IC | TC = 100C | 8.5 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | - | 45.0 | A |
| Gate-emitter voltage | VGE | - | 20 | V |
| Power dissipation | Ptot | TC = 25C | 33.3 | W |
| Power dissipation | Ptot | TC = 100C | 16.7 | W |
| Operating junction temperature | Tvj | - | -40...+175 | C |
| Storage temperature | Tstg | - | -55...+150 | C |
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 4.50 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 5.60 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 65 | K/W |
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