Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching
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Product Description
Product Overview
The IKP08N65H5 is a high-speed 5th generation IGBT from Infineon's TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and a maximum junction temperature of 175C, it is qualified according to JEDEC for target applications and is RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP 5
- Diode Type: RAPID 1
- Lead Plating: Pb-free
- Compliance: RoHS compliant
Technical Specifications
| Type | VCE | IC (TC=25C) | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKP08N65H5 | 650V | 18.0A | 1.65V | 175C | K08EEH5 | PG-TO220-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 8.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 9.0A, Tvj = 25C | 1.45 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.08mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 40.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 8.0A | 17.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 16 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 3 | pF |
| Gate charge | QG | VCC = 520V, IC = 8.0A, VGE = 15V | 22.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 7.0 | nH |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 11 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 5 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 115 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 15 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.07 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.03 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.10 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 40 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 0.13 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 6.8 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | -220 | A/s |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 10 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 6 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 145 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 16 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.11 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.05 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG = 48.0, L = 30nH | 0.16 | mJ |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 55 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 0.28 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | 7.7 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 150C, VR = 400V, IF = 4.0A, diF/dt = 800A/s | -145 | A/s |
Applications
- Solar converters
- Uninterruptible power supplies
- Welding converters
- Mid to high range switching frequency converters
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