600 Volt 4 Amp Infineon IKP04N60T IGBT Featuring TrenchStop and Fieldstop Technology with EmCon HE Diode
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Product Description
Product Overview
The IKP04N60T is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery EmCon HE diode. It offers very low VCE(sat) of 1.5 V (typ.) and a maximum junction temperature of 175 C. Designed for frequency converters and drives, its TrenchStop and Fieldstop technology provides tight parameter distribution, high ruggedness, temperature stable behavior, very high switching speed, and low VCE(sat). Key features include a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TrenchStop
- Diode Type: EmCon HE
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCE(sat),Tj=25C | Tj,max | Marking | Package |
| IKP04N60T | 600 V | 4 A | 1.5 V | 175 C | K04T60 | PG-TO-220-3-1 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V | |
| DC collector current, limited by Tjmax | IC | TC = 25C | 8 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | 4 | A |
| Pulsed collector current, tp limited by Tjmax | ICpul s | 12 | A | |
| Turn off safe operating area | VCE 600V, Tj 175C | - 12 | ||
| Diode forward current, limited by Tjmax | IF | TC = 25C | 8 | A |
| Diode forward current, limited by Tjmax | IF | TC = 100C | 4 | A |
| Diode pulsed current, tp limited by Tjmax | IFpul s | 12 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Short circuit withstand time | tSC | VGE = 15V, VCC 400V, Tj 150C | 5 | s |
| Power dissipation | Ptot | TC = 25C | 42 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+175 | C | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | 260 | C | ||
| IGBT thermal resistance, junction case | RthJC | 3.5 | K/W | |
| Diode thermal resistance, junction case | RthJC D | 5 | K/W | |
| Thermal resistance, junction ambient | RthJA | 62 | K/W | |
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.2mA | 600 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=4A, Tj=25C | 1.5 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=4A, Tj=175C | 1.9 | V |
| Diode forward voltage | VF | VGE=0V, IF=4A, Tj=25C | 1.65 | V |
| Diode forward voltage | VF | VGE=0V, IF=4A, Tj=175C | 1.6 | V |
| Gate-emitter threshold voltage | VGE(th) | IC= 60A,VCE=VGE | 4.1 | V |
| Zero gate voltage collector current | ICE | VCE=600V, VGE=0V, Tj=25C | 40 | A |
| Zero gate voltage collector current | ICE | VCE=600V, VGE=0V, Tj=175C | 1000 | A |
| Gate-emitter leakage current | IGE S | VCE=0V,VGE=20V | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=4A | 2.2 | S |
| Input capacitance | Ciss | 252 | pF | |
| Output capacitance | Coss | 20 | pF | |
| Reverse transfer capacitance | Crss | VCE=25V, VGE=0V, f=1MHz | 7.5 | pF |
| Gate charge | Qg ate | VCC=480V, IC=4A, VGE=15V | 27 | nC |
| Internal emitter inductance | LE | measured 5mm (0.197 in.) from case | 7 | nH |
| Short circuit collector current | IC(SC) | VGE=15V,tSC5s, VCC = 400V, Tj 150C | 36 | A |
| Turn-on delay time | td(on) | Inductive Load, Tj=25 C | 14 | ns |
| Rise time | tr | Inductive Load, Tj=25 C | 7 | ns |
| Turn-off delay time | td(off) | Inductive Load, Tj=25 C | 164 | ns |
| Fall time | tf | Inductive Load, Tj=25 C | 43 | ns |
| Turn-on energy | Eon | Inductive Load, Tj=25 C | 61 | J |
| Turn-off energy | Eoff | Inductive Load, Tj=25 C | 84 | J |
| Total switching energy | Ets | Tj=25C, VCC=400V,IC=4A, VGE=0/15V, RG= 47 , L =150nH, C =47pF | 145 | J |
| Diode reverse recovery time | trr | Inductive Load, Tj=25 C | 28 | ns |
| Diode reverse recovery charge | Qrr | Inductive Load, Tj=25 C | 79 | nC |
| Diode peak reverse recovery current | Irr m | Inductive Load, Tj=25 C | 5.3 | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | Tj=25C, VR=400V, IF=4A, diF/dt=610A/s | 346 | A/s |
| Turn-on delay time | td(on) | Inductive Load, Tj=175 C | 14 | ns |
| Rise time | tr | Inductive Load, Tj=175 C | 10 | ns |
| Turn-off delay time | td(off) | Inductive Load, Tj=175 C | 185 | ns |
| Fall time | tf | Inductive Load, Tj=175 C | 83 | ns |
| Turn-on energy | Eon | Inductive Load, Tj=175 C | 99 | J |
| Turn-off energy | Eoff | Inductive Load, Tj=175 C | 97 | J |
| Total switching energy | Ets | Tj=175C, VCC=400V,IC=4A, VGE=0/15V, RG= 47 , L =150nH, C =47pF | 196 | J |
| Diode reverse recovery time | trr | Inductive Load, Tj=175 C | 95 | ns |
| Diode reverse recovery charge | Qrr | Inductive Load, Tj=175 C | 291 | nC |
| Diode peak reverse recovery current | Irr m | Inductive Load, Tj=175 C | 6.6 | A |
| Diode peak rate of fall of reverse recovery current during tb | dirr/dt | Tj=175C, VR=400V, IF=4A, diF/dt=610A/s | 253 | A/s |
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