Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode
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Product Description
Product Overview
The IKW50N65EH5 is a high-speed fifth-generation IGBT from Infineon, utilizing TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies and serves as a plug-and-play replacement for previous IGBT generations. This device features a 650V breakdown voltage, low gate charge, and is copacked with a full-rated RAPID 1 fast and soft antiparallel diode. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Applications include uninterruptible power supplies, solar converters, welding converters, and mid to high-range switching frequency converters.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode: RAPID 1 fast and soft antiparallel diode
- Certifications: RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IKW50N65EH5 | 650V | 50A | 1.65V | 175C | K50EEH5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 50.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 50.0A, Tvj = 25C | 1.35 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.50mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 1 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50.0A | 62.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 3000 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 90 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 12 | pF |
| Gate charge | QG | VCC = 520V, IC = 50.0A, VGE = 15V | 120.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| IGBT thermal resistance, junction - case | Rth(j-C) | IGBT | 0.55 | K/W |
| Diode thermal resistance, junction - case | Rth(j-C) | Diode | 0.63 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 40 | K/W |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 25 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 29 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 172 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 35 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 1.50 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 0.50 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 2.00 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 81 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 1.10 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 17.0 | A |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 24 | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 30 | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 190 | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 30 | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 2.00 | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 0.60 | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0 | 2.60 | mJ |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 108 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 2.60 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s | 36.0 | A |
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