Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge for Power Conversion

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Product Description

Product Overview

The IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM 5
Certifications: RoHS compliant, JEDEC qualified

Technical Specifications

Type	VCE	IC (TC=25C)	VCEsat (Tvj=25C)	Tvjmax	Package
IGW50N65F5	650V	80.0A	1.6V	175C	PG-TO247-3

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	650	V
DC collector current, limited by Tvjmax (TC = 25C)	IC	80.0	A
DC collector current, limited by bondwire (TC = 100C)	IC	56.0	A
Pulsed collector current, tp limited by Tvjmax	ICpuls	150.0	A
Turn off safe operating area	-	-150.0	A
Gate-emitter voltage	VGE	20	V
Transient Gate-emitter voltage	VGE	30	V
Power dissipation (TC = 25C)	Ptot	305.0	W
Power dissipation (TC = 100C)	Ptot	152.5	W
Operating junction temperature	Tvj	-40...+175	C
Storage temperature	Tstg	-55...+150	C
Soldering temperature	-	260	C
Mounting torque, M3 screw	M	0.6	Nm

Thermal Resistance

Parameter	Symbol	Conditions	Max. Value	Unit
IGBT thermal resistance, junction - case	Rth(j-c)	-	0.50	K/W
Thermal resistance junction - ambient	Rth(j-a)	-	40	K/W

Electrical Characteristics (at Tvj = 25C, unless otherwise specified)

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	-	-	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 50.0A	-	1.60	2.10	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 50.0A, Tvj = 125C	-	1.80	-	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 50.0A, Tvj = 175C	-	1.90	-	V
Gate-emitter threshold voltage	VGE(th)	IC = 0.50mA, VCE = VGE	3.2	4.0	4.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	-	-	40.0	A
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 175C	-	-	2000.0	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE = 20V, IC = 50.0A	-	62.0	-	S

Dynamic Characteristic

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	3000	-	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	-	50	-	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	-	11	-	pF
Gate charge	QG	VCC = 520V, IC = 50.0A, VGE = 15V	-	120.0	-	nC
Internal emitter inductance	LE	measured 5mm from case	-	13.0	-	nH

Switching Characteristic, Inductive Load (Tvj = 25C)

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Turn-on delay time	td(on)	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	21	-	ns
Rise time	tr	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	15	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	175	-	ns
Fall time	tf	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	18	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.49	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.16	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.65	-	mJ
Turn-on delay time	td(on)	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	19	-	ns
Rise time	tr	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	4	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	195	-	ns
Fall time	tf	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	10	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.11	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.04	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.15	-	mJ

Switching Characteristic, Inductive Load (Tvj = 150C)

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Turn-on delay time	td(on)	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	20	-	ns
Rise time	tr	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	15	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	202	-	ns
Fall time	tf	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	3	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.68	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.21	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.89	-	mJ
Turn-on delay time	td(on)	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	18	-	ns
Rise time	tr	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	5	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	245	-	ns
Fall time	tf	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	12	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.18	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.06	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0	-	0.24	-	mJ