High Speed Switching Huixin H15N10D Single N Channel MOSFET Suitable for Motor Control and UPS Systems
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Delivery Time:
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Product Description
Product Overview
The H15N10D is a single N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is suitable for synchronous rectification in SMPS, hard switching and high-speed circuits, power tools, UPS, and motor control applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | VDS (V) | RDS(ON) (Typ) (m) | ID (A) | EAS (mJ) | TJ, TSTG (C) |
| H15N10D | TO-252 | 100 | 75 | 15 | 16 | -55 to 175 |
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| V(BR)DSS | Drain- Source Breakdown Voltage | 100 | -- | -- | V | VGS=0V,ID=250A |
| IDSS | Zero Gate Voltage Drain Current (25) | -- | -- | 1 | A | VDS=100V,VGS=0V |
| IDSS | Zero Gate Voltage Drain Current (100) | -- | -- | 100 | A | VDS=100V,VGS=0V |
| IGSS | Gate to Source Forward Leakage | -- | -- | 100 | nA | VGS=20V ,VDS=0V |
| IGSS | Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-20V ,VDS=0V |
| VGS(TH) | Gate Threshold Voltage | 1.0 | 2.0 | 2.5 | V | VGS=VDS,ID=250A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 75 | 90 | m | VGS=10V,ID=6A |
| RDS(on) | Static Drain- to- Source On- Resistance | -- | 105 | 130 | m | VGS=4.5V,ID=4A |
| Symbol | Parameter | Typ. | Units | Test Conditions |
| Ciss | Input Capacitance | 670 | pF | VGS=0V VDS=25V f=1MHz |
| Coss | Output Capacitance | 47 | pF | VGS=0V VDS=25V f=1MHz |
| Crss | Reverse Transfer Capacitance | 38 | pF | VGS=0V VDS=25V f=1MHz |
| Rg | Gate Resistance | 1 | f=1MHz | |
| Qg | Total Gate Charge | 20 | nC | VDS=80V ID=10A VGS=10V |
| Qgs | Gate- to- Source Charge | 5 | nC | VDS=80V ID=10A VGS=10V |
| Qgd | Gate-to-Drain(" Miller") Charge | 5.5 | nC | VDS=80V ID=10A VGS=10V |
| td(ON) | Turn- on Delay Time | 10 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| trise | Rise Time | 7 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| td(OFF) | Turn- OFF Delay Time | 34 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| tfall | Fall Time | 9 | nS | VDS=50V ID=5A VGS=10V RG=2.5 |
| VSD | Diode Forward Voltage | 1.2 | V | IF=6A,VGS=0V |
| Is | Diode Forward Current | 15 | A | Tc= 25 |
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Sellina