Huixin BC3407 P Channel Enhancement Mode Transistor Designed for Load Switching and PWM Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BC3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.
Product Attributes
- Marking: 3407
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.1A | 60 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3A | 87 | mΩ | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-4A | 5.5 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1 | -3 | V | |
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.2 | -1 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 700 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz | 120 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 75 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 8.6 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 5.0 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 28.2 | ns | ||
| Turn-off fall time | tf | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 13.5 | ns | ||
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