Dual N P Channel Enhancement Mode HXY MOSFET AON3611 HXY with Low Gate Charge and Trench Technology
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Product Description
Product Overview
The AON3611-HXY is a Dual N+P-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Model: AON3611-HXY
- Package: DFN3X3B-8L
- Website: www.hxymos.com
Technical Specifications
| Parameter | N-Channel | P-Channel | Units |
| Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID@TC=25, VGS=10V) | 16 | -14 | A |
| Continuous Drain Current (ID@TC=100, VGS=10V) | 5 | -4 | A |
| Continuous Drain Current (ID@TA=25, VGS=10V) | 2.3 | -1.8 | A |
| Pulsed Drain Current (IDM) | 40 | -40 | A |
| Single Pulse Avalanche Energy (EAS) | 26.6 | 110 | mJ |
| Avalanche Current (IAS) | 8.7 | -20 | A |
| Total Power Dissipation (PD@TC=25) | 10.8 | 10.8 | W |
| Total Power Dissipation (PD@TA=100) | 2 | 2 | W |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | |
| Thermal Resistance Junction-Case (RJC) | 6 | /W | |
| Drain-Source Breakdown Voltage (BVDSS) @ VGS=0V, ID=250uA | 30 | -30 | V |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS=10V, ID=10A | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS=-10V, ID=-8A | m | ||
| Gate Threshold Voltage (VGS(th)) @ VGS=VDS, ID=250uA | 1.0 to 2.5 | -1.0 to -2.5 | V |
| Drain-Source Leakage Current (IDSS) @ VDS=24V, VGS=0V, TJ=25 | uA | ||
| Gate-Source Leakage Current (IGSS) @ VGS=20V, VDS=0V | 100 | nA | |
| Forward Transconductance (gfs) @ VDS=5V, ID=10A | 14 | S | |
| Gate Resistance (Rg) @ VDS=0V, VGS=0V, f=1MHz | 2.3 | 15 | |
| Total Gate Charge (Qg) @ VDS=20V, ID=10A | 5 (4.5V) | nC | |
| Total Gate Charge (Qg) @ VDS=-20V, ID=-6A | 9.8 (-4.5V) | nC | |
| Input Capacitance (Ciss) @ VDS=15V, VGS=0V, f=1MHz | 416 | 930 | pF |
| Output Capacitance (Coss) @ VDS=15V, VGS=0V, f=1MHz | 62 | 148 | pF |
| Reverse Transfer Capacitance (Crss) @ VDS=15V, VGS=0V, f=1MHz | 51 | 115 | pF |
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