SiC Power MOSFET HXY MOSFET NTBG040N120SC1-HXY N-Channel Device for EV Chargers and Renewable Energy
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Product Description
Product Overview
The HUAXUANYANG HXY ELECTRONICS CO.,LTD NTBG040N120SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device designed for high-efficiency power applications. Leveraging 3rd generation SiC MOSFET technology, it offers reduced switching losses, minimized gate ringing, and higher system efficiency. Its optimized package with a separate driver source pin and high blocking voltage with low on-resistance make it suitable for demanding applications like renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Product Name: SiC Power MOSFET N-Channel Enhancement Mode
- Model: NTBG040N120SC1
- Technology: 3rd generation SiC MOSFET
- Certifications: Halogen free, RoHS compliant
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Condition |
| Maximum Ratings | ||||
| Operating junction and storage temperature | Tj , T stg | C | -40+175 | |
| Drain-source voltage | VDS | V | 1200 | |
| Continuous drain current | ID | A | 65 / 46 | TC = 25C ,VGS = 15V / TC = 100C,VGS = 15V |
| Pulsed drain current | ID pulse | A | 120 | (TC = 25C, tp limited by Tjmax) |
| Gate-Source voltage | VGS | V | -4/+18 | |
| Power dissipation | Ptot | W | 326 | (TC = 25C) |
| Gate-Source voltageAbsolute maximum values | VGSmax | V | -8/+22 | |
| Thermal Resistance | ||||
| Thermal resistance, junction case. Max | RthJC | C/W | 0.46 | |
| Thermal resistance, junction ambient. Max | RthJA | C/W | 40 | |
| Static Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | V | 1200 | VGS=0V, ID=100uA |
| Drain-source on-state resistance | RDS(on) | m | 32 / 40 / 59 / 62 | VGS=18V, ID=33.3A, TJ=25C / TJ=175C / VGS=15V, ID=33.3A, TJ=25C / TJ=175C |
| Gate threshold voltage | VGS(th ) | V | 4 | VDS=VGS,ID=10mA |
| Zero gate voltage drain current | IDSS | A | - / - / 1 | VDS=1200V,VGS=0V / TC=25C / TC=175C |
| Gate-source leakage current | IGSS | nA | - / - / 20 | VGS=20V, VDS=0V / VGS=15V, ID=33.3A / VGS=-4V, ID=100uA |
| Transconductance | gfs | mS | 100 | VDS=20V,ID=33.3A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | pF | 288 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Output Capacitance | Coss | pF | 112 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Reverse Transfer Capacitance | Crss | pF | 32 | VDS = 1000V, VGS = 0V, TJ = 25C, f=1MHz |
| Gate Total Charge | QG | nC | 125 | VDS = 800V, VGS = 0/15V, ID = 33.3A |
| Turn-on delay time | td(on) | ns | 13.4 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Rise time | tr | ns | 5.4 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-off delay time | td(off) | ns | 27.66 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Fall time | tf | ns | 51 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-On Switching Energy | EON | J | 79 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Turn-Off Switching Energy | EOFF | J | 701 | VDD = 800V, VGS = -4/+15V, ID = 20A, RG = 2.5, L = 120uH |
| Body Diode Characteristics | ||||
| Body Diode Forward Voltage | VSD | V | - / 4.8 / 5.3 | VGS=-4V,ISD=20A, TJ=25C / TJ=175C / VR = 800V, ID = 33.3A, di/dt = 1070A/S, TJ = 25C |
| Body Diode Reverse Recovery Time | trr | ns | 55 | VGS=-4V,ISD=20A, TJ=25C |
| Body Diode Reverse Recovery Charge | Qrr | nC | 55 | VGS=-4V,ISD=20A, TJ=25C |
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