IGBT Module Featuring Infineon FF300R12ME4 EconoDUAL3 Trench Fieldstop Technology for Motor Drives

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Product Description

FF300R12ME4 IGBT Module

The FF300R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. Ideal for motor drives, servo drives, UPS systems, and wind turbines.

Product Attributes

Brand: EconoDUAL3
Certifications: UL approved (E83335)

Technical Specifications

Parameter	Value	Unit	Conditions
IGBT, Inverter - Maximum Rated Values
Collector-emitter voltage	1200	V	Tvj = 25C
Continuous DC collector current	300	A	TC = 100C, Tvj max = 175C
Continuous DC collector current	450	A	TC = 25C, Tvj max = 175C
Repetitive peak collector current	600	A	tP = 1 ms
Total power dissipation	1600	W	TC = 25C, Tvj max = 175C
Gate-emitter peak voltage	+/-20	V
IGBT, Inverter - Characteristic Values
Collector-emitter saturation voltage	1.75 - 2.10	V	IC = 300 A, VGE = 15 V
Gate threshold voltage	5.2 - 6.4	V	IC = 11.5 mA, VCE = VGE, Tvj = 25C
Gate charge	2.25	C	VGE = -15 V ... +15 V
Internal gate resistor	2.5		Tvj = 25C
Input capacitance	18.5	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance	1.05	nF	f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current	3.0	mA	VCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current	400	nA	VCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time	0.17 - 0.19	s	IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.3
Rise time	0.05	s	IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.3
Turn-off delay time	0.45 - 0.60	s	IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.3
Fall time	0.07 - 0.12	s	IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.3
Turn-on energy loss per pulse	9.90 - 19.5	mJ	IC = 300 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, di/dt = 6050 A/s
Turn-off energy loss per pulse	25.0 - 42.0	mJ	IC = 300 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, du/dt = 3100 V/s
Short circuit data	1200	A	VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case (per IGBT)	0.094	K/W
Thermal resistance, case to heatsink (per IGBT)	0.03	K/W	Paste = 1 W/(mK)
Temperature under switching conditions	-40 - 150	C	Tvj op
Diode, Inverter - Maximum Rated Values
Repetitive peak reverse voltage	1200	V	Tvj = 25C
Continuous DC forward current	300	A
Repetitive peak forward current	600	A	tP = 1 ms
It - value	15500 - 19000	As	VR = 0 V, tP = 10 ms
Diode, Inverter - Characteristic Values
Forward voltage	1.65 - 2.10	V	IF = 300 A
Peak reverse recovery current	335 - 410	A	IF = 300 A, - diF/dt = 6050 A/s
Recovered charge	30.5 - 67.0	C	IF = 300 A, - diF/dt = 6050 A/s
Reverse recovery energy	19.0 - 34.5	mJ	IF = 300 A, - diF/dt = 6050 A/s
Thermal resistance, junction to case (per diode)	0.15	K/W
Thermal resistance, case to heatsink (per diode)	0.046	K/W	Paste = 1 W/(mK)
Temperature under switching conditions	-40 - 150	C	Tvj op
NTC Thermistor - Characteristic Values
Rated resistance	5.00	k	TC = 25C
Deviation of R100	-5 - 5	%	TC = 100C, R100 = 493
Power dissipation	20.0	mW	TC = 25C
B-value (B25/50)	3375	K
B-value (B25/80)	3411	K
B-value (B25/100)	3433	K
Module - General Data
Isolation test voltage	2.5	kV	RMS, f = 50 Hz, t = 1 min
Material of module baseplate	Cu
Internal isolation	Al2O3		Basic insulation (class 1, IEC 61140)
Creepage distance (terminal to heatsink)	14.5	mm
Creepage distance (terminal to terminal)	13.0	mm
Clearance (terminal to heatsink)	12.5	mm
Clearance (terminal to terminal)	10.0	mm
Comparative tracking index	> 200
Thermal resistance, case to heatsink (per module)	0.009	K/W	Paste = 1 W/(mK)
Stray inductance module	20	nH	LsCE
Module lead resistance (terminals - chip)	1.20	m	TC = 25C, per switch
Storage temperature	-40 - 125	C	Tstg
Mounting torque for module mounting (Screw M5)	3.00 - 6.00	Nm
Terminal connection torque (Screw M6)	3.0 - 6.0	Nm
Weight	345	g