1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
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Product Description
Product Overview
The APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT50GF120B2RG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) | TC = 25C | 100 | A | ||
| IC | DC collector current(1) | TC = 100C | 50 | A | ||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 100 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A | ||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | ±20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp ≤ 10µs, D < 0.010) TVJ = 25C | ±30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 600 | W | ||
| Ptot | Power Dissipation | TC = 100C | 300 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | °C | ||
| TSTG | Storage Temperature Range | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.9 | 2.3 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175°C | 2.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 2.7 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175°C | 2.4 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 350.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = ±20V , VCE = 0V | - | ±100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 50A | 30 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 6420 | - | pF | |
| Coes | Output Capacitance | 195 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 42 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | 200 | - | nC | |
| Qge | Gate to Emitter charge | 46 | - | nC | ||
| Qgc | Gate to Collector charge | 75 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 600V IC= 50A, RG(off) = 10Ω | 55 | - | ns | |
| tr | Turn-On Rise Time | 32 | - | ns | ||
| td(off) | Turn-Off Delay Time | 216 | - | ns | ||
| tf | Turn-Off Fall Time | 38 | - | ns | ||
| Eon | Turn-on energy | 2.65 | - | mJ | ||
| Eoff | Turn-off energy | 1.8 | - | mJ | ||
| Ets | Total switching energy | 4.45 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 600 V, IF = 50 A, di/dt = 600 A/µS | 380 | - | ns | |
| Qrr | Reverse recovery charge | 2.31 | - | mC | ||
| Irrm | Peak reverse recovery current | 15.5 | - | A | ||
| Thermal Resistance | ||||||
| RθJA | Thermal resistance: junction - ambient | 40 | °C/W | |||
| RθJC | IGBT Thermal resistance: junction - case | 0.25 | - | °C/W | ||
| RθJC | Diode Thermal resistance: junction - case | 0.49 | - | °C/W | ||
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Sellina