1200V 75A IGBT Transistor HXY MOSFET APT70GR120B2-HXY with Low EMI and Enhanced Thermal Stability
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Product Description
Product Overview
The APT70GR120B2 is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (VCE(SAT)), and easy paralleling capability due to a positive temperature coefficient in VCESAT. Its low EMI and maximum junction temperature of 175C make it suitable for demanding industrial uses.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT70GR120B2
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247PC
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) TC = 25C | 150 | A | |||
| IC | DC collector current(1) TC = 100C | 75 | A | |||
| ICM | Pulsed collector current TC = 25C | 300 | A | |||
| IF | Maximum Diode forward current(1) TC = 25C | 150 | A | |||
| IF | Maximum Diode forward current(1) TC = 100C | 75 | A | |||
| IFM | Diode pulsed current TC = 25C | 300 | A | |||
| VGE | Gate-Emitter voltage TVJ = 25C | 20 | V | |||
| VGE | Transient Gate-Emitter Voltage (tp 10s, D < 0.010) TVJ = 25C | 30 | V | |||
| Ptot | Power Dissipation TC = 25C | 930 | W | |||
| Ptot | Power Dissipation TC = 100C | 460 | W | |||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A | 1.7 | 1.9 | 2.3 | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 175C | - | 2.8 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 75A | - | 1.9 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175C | - | 1.45 | - | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 1200V , VGE = 0V | - | - | 450.0 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 75A | - | 49 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 9812 | - | pF |
| Coes | Output Capacitance | - | 312 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 61 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 960V, IC = 75A | - | 321 | - | nC |
| Qge | Gate to Emitter charge | - | 71 | - | nC | |
| Qgc | Gate to Collector charge | - | 121 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 600V IC= 75A, RG(off) = 6 | - | 46 | - | ns |
| tr | Turn-On Rise Time | - | 60 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 185 | - | ns | |
| tf | Turn-Off Fall Time | - | 89 | - | ns | |
| Eon | Turn-on energy | - | 5.69 | - | mJ | |
| Eoff | Turn-off energy | - | 2.75 | - | mJ | |
| Ets | Total switching energy | - | 8.44 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 600 V, IF = 75 A, di/dt = 600 A/S | - | 400 | - | ns |
| Qrr | Reverse recovery charge | - | 2.9 | - | mC | |
| Irrm | Peak reverse recovery current | - | 16.1 | - | A | |
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.16 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.28 | C/W | |||
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