insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems
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Product Description
Product Overview
The IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXGH40N120B2D1
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector emitter voltage | VCE | 1200 | V | |||
| DC collector current | IC | TC = 25C | 80 | A | ||
| DC collector current | IC | TC = 100C | 40 | A | ||
| Pulsed collector current | ICM | TC = 25C | 160 | A | ||
| Maximum Diode forward current | IF | TC = 25C | 80 | A | ||
| Maximum Diode forward current | IF | TC = 100C | 40 | A | ||
| Diode pulsed current | IFM | TC = 25C | 160 | A | ||
| Gate-Emitter voltage | VGE | TVJ = 25C | ±20 | V | ||
| Transient Gate-Emitter Voltage | (tp ≤ 10μs, D < 0.010) TVJ = 25C | ±30 | V | |||
| Power Dissipation | Ptot | TC = 25C | 417 | W | ||
| Power Dissipation | Ptot | TC = 100C | 208 | W | ||
| Operating Junction Temperature Range | TVJ | -40 | +175 | b0;C | ||
| Storage Temperature Range | TSTG | -55 | +150 | b0;C | ||
| Thermal Resistance | ||||||
| Thermal resistance: junction - ambient | RθJA | 40 | b0;C/W | |||
| IGBT Thermal resistance: junction - case | RθJC IGBT | 0.36 | b0;C/W | |||
| Diode Thermal resistance: junction - case | RθJC Diode | 0.45 | b0;C/W | |||
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | V | ||
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 25b0;C | 1.9 | 2.3 | V | |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 175b0;C | 2.9 | V | ||
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 25b0;C | 2.5 | V | ||
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 175b0;C | 1.8 | V | ||
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| Zero Gate voltage Collector current | ICES | VCE = 650V , VGE = 0V | 250.0 | mA | ||
| Gate-Emitter leakage current | IGES | VGE = ±20V , VCE = 0V | ±100 | nA | ||
| Transconductance | gfs | VGE = 20V, IC = 40A | 28 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 1MHz | 5047 | pF | ||
| Output Capacitance | Coes | 161 | pF | |||
| Reverse Transfer Capacitance | Cres | 35 | pF | |||
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 40A | 170 | nC | ||
| Gate to Emitter charge | Qge | 37.5 | nC | |||
| Gate to Collector charge | Qgc | 68 | nC | |||
| Switching Characteristics | ||||||
| Turn-On DelayTime | td(on) | VGE = 15V, VCC = 600V IC=40A, RG(off) = 12Ω,RG(off) = 12Ω | 48 | ns | ||
| Turn-On Rise Time | tr | 50 | ns | |||
| Turn-Off DelayTime | td(off) | 195 | ns | |||
| Turn-Off Fall Time | tf | 100 | ns | |||
| Turn-on energy | Eon | 2.65 | mJ | |||
| Turn-off energy | Eoff | 1.6 | mJ | |||
| Total switching energy | Ets | 4.25 | mJ | |||
| Diode Recovery Characteristics | ||||||
| Reverse recovery time | Trr | VR = 600 V, IF = 40 A, di/dt = 600 A/μS | 375 | ns | ||
| Reverse recovery charge | Qrr | 2.29 | mC | |||
| Peak reverse recovery current | Irrm | 15 | A | |||
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