High Voltage Silicon NPN Power Transistor ISC 2SC5027 with 800V Collector Emitter Breakdown Voltage

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Product Description

Product Overview

The ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum lot-to-lot variations for robust device performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon
Origin: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage	800V(Min)				V
	High Switching Speed
VCBO	Collector-Base Voltage				1100	V
VCEO	Collector-Emitter Voltage				800	V
VEBO	Emitter-Base Voltage				7	V
IC	Collector Current-Continuous				3	A
ICM	Collector Current-Peak				10	A
IB	Base Current-Continuous				1.5	A
PC	Collector Power Dissipation @TC=25				50	W
TJ	Junction Temperature				150
Tstg	Storage Temperature		-55		150
BVEBO	Emitter -Base Breakdown Voltage	IE= 1mA; IC= 0	7			V
BVCEO	Collector- Emitter Breakdown Voltage	IC= 5mA; IB= 0	800			V
BVCBO	Collector- Base Breakdown Voltage	IC= 1mA; IE= 0	1100			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 1.5A; IB= 0.3A			2.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 1.5A; IB= 0.3A			1.5	V
ICBO	Collector Cutoff Current	VCB= 800V; IE= 0			10	A
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			10	A
hFE1	DC Current Gain	IC= 0.2A; VCE= 5V	10		40
hFE2	DC Current Gain	IC= 1A; VCE= 5V			8
COB	Output Capacitance	IE= 0; VCB= 10V; f= 1MHz			60	pF
fT	Current-GainBandwidth Product	IE= 0.2A; VCE= 10V			12	MHz