NPN Power Transistor ISC 2SC2336 Featuring High Collector Emitter Voltage and Linear hFE for Operation

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Product Description

Product Overview

The ISC 2SC2336 is a Silicon NPN Power Transistor designed for audio frequency and high frequency power amplification. It features good linearity of hFE, a high collector-emitter breakdown voltage of 180V (Min), and a wide area of safe operation. This transistor is a complement to the 2SA1006 type and offers minimum lot-to-lot variations for robust device performance and reliable operation.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Origin: Silicon
Type: NPN Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
VCBO	Collector-Base Voltage				180	V
VCEO	Collector-Emitter Voltage				180	V
VEBO	Emitter-Base Voltage				5.0	V
IC	Collector Current-Continuous				1.5	A
ICM	Collector Current-Peak				3.0	A
PC	Collector Power Dissipation@ Ta=25				1.5	W
PC	Collector Power Dissipation@TC=25				25	W
TJ	Junction Temperature				150
Tstg	Storage Temperature Range		-55		150
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 500mA; IB= 50mA		1.0		V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 500mA; IB= 50mA		1.5		V
ICBO	Collector Cutoff Current	VCB= 150V; IE= 0			1.0	A
IEBO	Emitter Cutoff Current	VEB= 3.0V; IC=0			1.0	A
hFE-1	DC Current Gain	IC= 5mA ; VCE= 5V	30
		IC= 150mA ; VCE= 5V	60		320
		hFE-2 Classifications (R, Q, P)		60-120 (R), 100-200 (Q), 160-320 (P)
fT	Current-GainBandwidth Product	IC= 100mA ; VCE= 10V		95		MHz
COB	Output Capacitance	IE= 0 ; VCB= 10V;ftest= 1.0MHz			30	pF