1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications
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Product Description
Product Overview
The APT75GP120B2G is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (Vce(sat)), and easy paralleling capability due to its positive temperature coefficient in Vce(sat). The maximum junction temperature is 175C.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT75GP120B2G
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247PC
- Packing: 30PCS
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | |||||
| VCE (Collector emitter voltage) | 1200 | V | |||
| IC (DC collector current) | TC = 25C | 150 | A | ||
| IC (DC collector current) | TC = 100C | 75 | A | ||
| ICM (Pulsed collector current) | TC = 25C | 300 | A | ||
| IF (Maximum Diode forward current) | TC = 25C | 150 | A | ||
| IF (Maximum Diode forward current) | TC = 100C | 75 | A | ||
| IFM (Diode pulsed current) | TC = 25C | 300 | A | ||
| VGE (Gate-Emitter voltage) | TVJ = 25C | 20 | V | ||
| VGE (Transient Gate-Emitter Voltage) | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | ||
| Ptot (Power Dissipation) | TC = 25C | 930 | W | ||
| Ptot (Power Dissipation) | TC = 100C | 460 | W | ||
| TVJ (Operating Junction Temperature Range) | -40 | +175 | C | ||
| TSTG (Storage Temperature Range) | -55 | +150 | C | ||
| Electrical Characteristics | |||||
| V(BR)CES (Collector - Emitter Breakdown Voltage) | VGE = 0V , IC = 0.5mA | 1200 | V | ||
| VCESAT (Collector - Emitter Saturation Voltage) | VGE = 15V , IC = 75A | 1.9 | 2.3 | V | |
| VCESAT (Collector - Emitter Saturation Voltage) | VGE = 15V , IC = 75A ,TVJ = 175C | 2.8 | V | ||
| VF (Diode forward voltage) | VGE = 0V , IC = 75A | 1.9 | V | ||
| VF (Diode forward voltage) | VGE = 0V , IC = 50A ,TVJ = 175C | 1.45 | V | ||
| VGE(th) (Gate-Emitter threshold voltage) | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES (Zero Gate voltage Collector current) | VCE = 1200V , VGE = 0V | 450.0 | mA | ||
| IGES (Gate-Emitter leakage current) | VGE = 20V , VCE = 0V | 100 | nA | ||
| gfs (Transconductance) | VGE = 20V, IC = 75A | 49 | S | ||
| Dynamic Characteristics | |||||
| Cies (Input Capacitance) | VGE = 0V, VCE = 25V, f = 1MHz | 9812 | pF | ||
| Coes (Output Capacitance) | 312 | pF | |||
| Cres (Reverse Transfer Capacitance) | 61 | pF | |||
| Qg (Gate Charge) | VGE = 0 to 15V VCE = 960V, IC = 75A | 321 | nC | ||
| Qge (Gate to Emitter charge) | 71 | nC | |||
| Qgc (Gate to Collector charge) | 121 | nC | |||
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VGE = 15V, VCC = 600V IC= 75A, RG(off) = 6 | 46 | ns | ||
| tr (Turn-On Rise Time) | 60 | ns | |||
| td(off) (Turn-Off Delay Time) | 185 | ns | |||
| tf (Turn-Off Fall Time) | 89 | ns | |||
| Eon (Turn-on energy) | 5.69 | mJ | |||
| Eoff (Turn-off energy) | 2.75 | mJ | |||
| Ets (Total switching energy) | 8.44 | mJ | |||
| Diode Recovery Characteristics | |||||
| Trr (Reverse recovery time) | VR = 600 V, IF = 75 A, di/dt = 600 A/S | 400 | ns | ||
| Qrr (Reverse recovery charge) | 2.9 | mC | |||
| Irrm (Peak reverse recovery current) | 16.1 | A | |||
| Thermal Resistance | |||||
| RJA (junction - ambient) | 40 | C/W | |||
| RJC (junction - case IGBT) | 0.16 | C/W | |||
| RJC (junction - case Diode) | 0.28 | C/W | |||
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