High Collector Emitter Voltage ISC 2SC4552 Silicon NPN Power Transistor for Driver Circuit Solutions

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Product Description

ISC Silicon NPN Power Transistor 2SC4552

The 2SC4552 is an NPN power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high DC current gain (hFE=100 Min @ VCE=2V, IC=3A), and low saturation voltage (VCE(sat)=0.3V Max @ IC=8A, IB=0.4A). Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.

Product Attributes

Brand: ISC
Trademark: ISC & ISCsemi
Material: Silicon
Type: NPN Power Transistor

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ.	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC=50mA, Ib=0	60			V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 8A; IB= 0.4A			0.3	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 12A; IB= 0.6A			0.5	V
VBE(sat)-1	Base-Emitter Saturation Voltage	IC= 8A; IB= 0.4A			1.2	V
VBE(sat)-2	Base-Emitter Saturation Voltage	IC= 12A; IB= 0.6A			1.5	V
ICBO	Collector Cutoff Current	VCB= 60V; IE= 0			10	A
ICEO	Collector Cutoff Current	VCE= 60V; Ib=0			1.0	mA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			10	A
hFE-1	DC Current Gain	IC= 1.5A; VCE= 2V	100
hFE-2	DC Current Gain	IC= 3A; VCE= 2V	100		400
hFE-3	DC Current Gain	IC= 8A; VCE= 2V	60
hFE-2 Classifications			M: 100-200 L: 150-300 K: 200-400
VCBO	Collector-Base Voltage				100	V
VCEO	Collector-Emitter Voltage				60	V
VEBO	Emitter-Base Voltage				7.0	V
IC	Collector Current-Continuous				15	A
ICM	Collector Current-Pulse				30	A
IB	Base Current-Continuous				7.5	A
PT	Total Power Dissipation @TC=25				30	W
PT	Total Power Dissipation @Ta=25				2.0	W
TJ	Junction Temperature				150
Tstg	Storage Temperature		-55		150