Power Switching HXY MOSFET IXGH40N120A2-HXY IGBT Module for EV Chargers Solar Inverters and UPS Systems
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Product Description
Product Overview
The IXGH40N120A2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-chargers, and solar string inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXGH40N120A2
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) | TC = 25C | 80 | A | ||
| TC = 100C | 40 | A | ||||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A | ||
| TC = 100C | 40 | A | ||||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| Transient Gate-Emitter Voltage | (tp ' 10s, D | 30 | V | |||
| Ptot | Power Dissipation | TC = 25C | 417 | W | ||
| TC = 100C | 208 | W | ||||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case IGBT | 0.36 | C/W | |||
| RJC | Diode Thermal resistance: junction - case Diode | 0.45 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 25C | 1.6 | 1.9 | 2.3 | V |
| VGE = 15V , IC = 40A ,TVJ = 175C | - | 2.9 | - | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 25C | - | 2.5 | - | V |
| VGE = 0V , IC = 40A ,TVJ = 175C | - | 1.8 | - | V | ||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 250.0 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 40A | - | 28 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 5047 | - | pF |
| Coes | Output Capacitance | - | 161 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 35 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 960V, IC = 40A | - | 170 | - | nC |
| Qge | Gate to Emitter charge | - | 37.5 | - | nC | |
| Qgc | Gate to Collector charge | - | 68 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 600V IC=40A, RG(off) = 12,RG(off) = 12 | - | 48 | - | ns |
| tr | Turn-On Rise Time | - | 50 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 195 | - | ns | |
| tf | Turn-Off Fall Time | - | 100 | - | ns | |
| Eon | Turn-on energy | - | 2.65 | - | mJ | |
| Eoff | Turn-off energy | - | 1.6 | - | mJ | |
| Ets | Total switching energy | - | 4.25 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 600 V, IF = 40 A, di/dt = 600 A/S | - | 375 | - | ns |
| Qrr | Reverse recovery charge | - | 2.29 | - | mC | |
| Irrm | Peak reverse recovery current | - | 15 | - | A | |
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