HXY MOSFET SCT3022KLHRC11 HXY Silicon Carbide Power MOSFET for Renewable Energy and EV Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
SiC Power MOSFET N-Channel Enhancement Mode
The HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET offers advanced 3rd generation Silicon Carbide technology for high-efficiency power conversion. It is designed to reduce switching losses, minimize gate ringing, and improve system efficiency, leading to reduced cooling requirements and increased power density. This MOSFET is ideal for high-speed switching applications and is suitable for demanding environments.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | ID (A) | RDS(on) (m) | VGSmax (V) | TJ (C) | Applications |
| SCT3022KLHRC11 | TO-247 | 1200 | 81 (TC=25C) | 14.7 - 28.8 (VGS=15V, ID=50A) | -8/+19 (dynamic) | -40 to +175 | Renewable energy, EV battery chargers, High voltage DC/DC converters, Switch Mode Power Supplies |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina