Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems

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Product Description

Product Overview

The IGW50N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: IGW50N60TP
Package: TO-247
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VCE	Collector emitter voltage				650	V
IC	DC collector current(1)	TC = 25C			80	A
IC	DC collector current(1)	TC = 100C			50	A
ICM	Pulsed collector current	TC = 25C			200	A
IF	Maximum Diode forward current(1)	TC = 25C			80	A
IF	Maximum Diode forward current(1)	TC = 100C			50	A
IFM	Diode pulsed current	TC = 25C			200	A
VGE	Gate-Emitter voltage	TVJ = 25C			20	V
VGE	Transient Gate-Emitter Voltage	(tp 10s, D < 0.010), TVJ = 25C			30	V
Ptot	Power Dissipation	TC = 25C			250	W
Ptot	Power Dissipation	TC = 100C			129	W
TVJ	Operating Junction Temperature Range		-40		+175	C
TSTG	Storage Temperature Range		-55		+150	C
Thermal Resistance
RJA	Thermal resistance: junction - ambient			40		C/W
RJC	IGBT Thermal resistance: junction - case	IGBT		0.65		C/W
RJC	Diode Thermal resistance: junction - case	Diode		0.58		C/W
Electrical Characteristics
V(BR)CES	Collector - Emitter Breakdown Voltage	VGE = 0V , IC = 0.5mA	650	-	-	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A		1.6	2.1	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A ,TVJ = 125C		1.93	-	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A ,TVJ = 175C		2.0	-	V
VF	Diode forward voltage	VGE = 0V , IC = 50A		1.85	-	V
VF	Diode forward voltage	VGE = 0V , IC = 50A ,TVJ = 125C		1.6	-	V
VF	Diode forward voltage	VGE = 0V , IC = 50A ,TVJ = 175C		1.45	-	V
VGE(th)	Gate-Emitter threshold voltage	VGE = VCE, IC = 250mA	3.2	4	4.8	V
ICES	Zero Gate voltage Collector current	VCE = 650V , VGE = 0V	-	-	50	mA
IGES	Gate-Emitter leakage current	VGE = 20V , VCE = 0V	-	-	100	nA
gfs	Transconductance	VGE = 20V, IC = 50A	-	56	-	S
Dynamic Characteristics
Cies	Input Capacitance	VGE = 0V, VCE = 25V, f = 1MHz	-	1916	-	pF
Coes	Output Capacitance		-	139	-	pF
Cres	Reverse Transfer Capacitance		-	13	-	pF
Qg	Gate Charge	VGE = 0 to 15V, VCE = 520V, IC = 50A	-	71	-	nC
Qge	Gate to Emitter charge		-	10	-	nC
Qgc	Gate to Collector charge		-	21	-	nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12	-	17	-	ns
tr	Turn-On Rise Time		-	30	-	ns
td(off)	Turn-Off DelayTime		-	110	-	ns
tf	Turn-Off Fall Time		-	34	-	ns
Eon	Turn-on energy		-	1.35	-	mJ
Eoff	Turn-off energy		-	0.51	-	mJ
Ets	Total switching energy		-	1.86	-	mJ
Diode Recovery Characteristics
Trr	Reverse recovery time	VR = 400 V, IF = 50 A, di/dt = 400 A/S	-	56	-	ns
Qrr	Reverse recovery charge		-	0.27	-	mC
Irrm	Peak reverse recovery current		-	8	-	A