HXY MOSFET APT45GP120B2DQ2G HXY 1200V 50A IGBT transistor module for solar and EV charging solutions
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Product Description
Product Overview
The APT45GP120B2DQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV-chargers, and solar string inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT45GP120B2DQ2G
- Package: TO-247P
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) | TC = 25C | 100 | A | ||
| TC = 100C | 50 | A | ||||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 100 | A | ||
| TC = 100C | 50 | A | ||||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | ±20 | V | ||
| Transient Gate-Emitter Voltage | (tp ≤ 10µs, D < 0.010) TVJ = 25C | ±30 | V | |||
| Ptot | Power Dissipation | TC = 25C | 600 | W | ||
| TC = 100C | 300 | W | ||||
| TVJ | Operating Junction Temperature Range | -40 | +175 | B0;C | ||
| TSTG | Storage Temperature Range | -55 | +150 | B0;C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.9 | 2.3 | V | |
| VGE = 15V , IC = 50A ,TVJ = 175B0;C | 2.8 | - | V | |||
| VF | Diode forward voltage | VGE = 0V , IF = 50A | 2.7 | - | V | |
| VGE = 0V , IF = 50A ,TVJ = 175B0;C | 2.4 | - | V | |||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 350.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = ±20V , VCE = 0V | - | ±100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 50A | 30 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 6420 | - | pF | |
| Coes | Output Capacitance | 195 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 42 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | 200 | - | nC | |
| Qge | Gate to Emitter charge | 46 | - | nC | ||
| Qgc | Gate to Collector charge | 75 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 600V IC= 50A, RG(off) = 10Ω | 55 | - | ns | |
| tr | Turn-On Rise Time | 32 | - | ns | ||
| td(off) | Turn-Off Delay Time | 216 | - | ns | ||
| tf | Turn-Off Fall Time | 38 | - | ns | ||
| Eon | Turn-on energy | 2.65 | - | mJ | ||
| Eoff | Turn-off energy | 1.8 | - | mJ | ||
| Ets | Total switching energy | 4.45 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| trr | Reverse recovery time | VR = 600 V, IF = 50 A, di/dt = 600 A/µS | 380 | - | ns | |
| Qrr | Reverse recovery charge | 2.31 | - | mC | ||
| Irrm | Peak reverse recovery current | 15.5 | - | A | ||
| Thermal Resistance | ||||||
| RθJA | Thermal resistance: junction - ambient | 40 | B0;C/W | |||
| RθJC | IGBT Thermal resistance: junction - case IGBT | 0.25 | B0;C/W | |||
| RθJC | Diode Thermal resistance: junction - case Diode | 0.49 | B0;C/W | |||
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