650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free
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Product Description
Product Overview
The IXYH75N65C3D1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXYH75N65C3D1
- Origin: Shenzhen, China
- Package Type: TO-247
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @TC=25C | 100 | A | Collector Current |
| IC @TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current |
| IF @TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time |
| PD @TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) Typ @IC=60A, VGE=15V, TJ=25 | 1.65 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) Typ @VCE=VGE,IC=1mA | 5.3 | V | Gate Threshold Voltage |
| VF Typ @IF=50A, TJ=25 | 1.65 | V | Diode Forward Voltage |
| ICES @VCE=650V, VGE=0V | -- | A | Collector-Emitter Leakage Current |
| IGES(F) @VGE=+20V | -- | nA | Gate-Emitter Forward Leakage Current |
| IGES(R) @VGE=-20V | -- | nA | Gate-Emitter Reverse Leakage Current |
| Cies Typ @VGE=0V, VCE=25V, f=1.0MHz | 3356 | pF | Input Capacitance |
| Coes Typ | 179 | pF | Output Capacitance |
| Cres Typ | 93 | pF | Reverse Transfer Capacitance |
| Qg Typ @VCC=520V, ICE=60A, VGE=15V | 183 | nC | Gate charge |
| Qge Typ | 26 | nC | Gate-emitter charge |
| Qgc Typ | 83 | nC | Gate-collector charge |
| td(on) Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 24 | ns | Turn-on Delay Time |
| tr Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 88 | ns | Rise Time |
| td(off) Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 124 | ns | Turn-Off Delay Time |
| tf Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 73 | ns | Fall Time |
| Eon Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.40 | mJ | Turn-On Switching Loss |
| Eoff Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.20 | mJ | Turn-Off Switching Loss |
| Ets Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 2.60 | mJ | Total Switching Loss |
| Trr Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 136 | ns | Reverse Recovery Time |
| Qrr Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 350 | nC | Reverse Recovery Charge |
| Irrm Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 6.9 | A | Reverse Recovery Current |
Applications
UPS, Motor drives, Boost, Portable power stations.
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina