rugged JIAENSEMI JNG15T120HIRU2 trench IGBT module for motor drives UPS and portable power stations
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.
Product Attributes
- Brand: JIAEN
- Certifications: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Units | Conditions |
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | + 20 | V | |
| Continuous Collector Current (IC) | 30 | A | TC=25 |
| Continuous Collector Current (IC) | 15 | A | TC=100 |
| Pulsed Collector Current (ICM) | 45 | A | Note 1 |
| Diode Continuous Forward Current (IF) | 15 | A | TC=100 |
| Diode Maximum Forward Current (IFM) | 45 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 5 | us | |
| Maximum Power Dissipation (PD) | 175 | W | TC=25 |
| Operating Junction Temperature Range (TJ) | -55 to +175 | ||
| Thermal Characteristics | |||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 0.85 | / W | |
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 1.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |
| Electrical Characteristics (IGBT) | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 1200 | V | VGE= 0V, IC= 1mA |
| Collector-Emitter Leakage Current (ICES) | 100 | uA | VCE= 1200V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | + 200 | nA | VGE= + 20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 - 7.0 | V | VGE= VCE, IC= 1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.75 | V | VGE=15V, IC= 15A |
| Total Gate Charge (Qg) | 70 | nC | VCC=600V, VGE=15V, IC=15A |
| Turn-on Delay Time (td(on)) | 19 | ns | VCC=600V, VGE=15V, IC=15A, RG=15, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 20 | ns | |
| Turn-off Delay Time (td(off)) | 131 | ns | |
| Turn-off Fall Time (tf) | 210 | ns | |
| Turn-on Switching Loss (Eon) | 1.1 | mJ | |
| Turn-off Switching Loss (Eoff) | 0.9 | mJ | |
| Total Switching Loss (Ets) | 2.0 | mJ | |
| Input Capacitance (Cies) | 1320 | pF | VCE=25V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 57 | pF | |
| Reverse Transfer Capacitance (Cres) | 11 | pF | |
| Electrical Characteristics of Diode | |||
| Diode Forward Voltage (VF) | 2.1 - 3.5 | V | IF=15A |
| Diode Reverse Recovery Time (trr) | 130 | ns | VCE = 600V, IF= 15A, diF/dt = 200A/us |
| Diode peak Reverse Recovery Current (Irr) | 4.8 | A | |
| Diode Reverse Recovery Charge (Qrr) | 220 | nC | |
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina