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rugged JIAENSEMI JNG15T120HIRU2 trench IGBT module for motor drives UPS and portable power stations

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.

Product Attributes

  • Brand: JIAEN
  • Certifications: Halogen Free and Green Devices Available

Technical Specifications

ParameterValueUnitsConditions
Absolute Maximum Ratings
Collector-Emitter Voltage (VCES)1200V
Gate-Emitter Voltage (VGES)+ 20V
Continuous Collector Current (IC)30ATC=25
Continuous Collector Current (IC)15ATC=100
Pulsed Collector Current (ICM)45ANote 1
Diode Continuous Forward Current (IF)15ATC=100
Diode Maximum Forward Current (IFM)45ANote 1
Short Circuit Withstand Time (tsc)5us
Maximum Power Dissipation (PD)175WTC=25
Operating Junction Temperature Range (TJ)-55 to +175
Thermal Characteristics
Thermal Resistance, Junction to case for IGBT (Rth j-c)0.85/ W
Thermal Resistance, Junction to case for Diode (Rth j-c)1.5/ W
Thermal Resistance, Junction to Ambient (Rth j-a)40/ W
Electrical Characteristics (IGBT)
Collector-Emitter Breakdown Voltage (BVCES)1200VVGE= 0V, IC= 1mA
Collector-Emitter Leakage Current (ICES)100uAVCE= 1200V, VGE= 0V
Gate Leakage Current, Forward (IGES)+ 200nAVGE= + 20V, VCE= 0V
Gate Threshold Voltage (VGE(th))5.0 - 7.0VVGE= VCE, IC= 1mA
Collector-Emitter Saturation Voltage (VCE(sat))1.75VVGE=15V, IC= 15A
Total Gate Charge (Qg)70nCVCC=600V, VGE=15V, IC=15A
Turn-on Delay Time (td(on))19nsVCC=600V, VGE=15V, IC=15A, RG=15, Inductive Load, TC=25
Turn-on Rise Time (tr)20ns
Turn-off Delay Time (td(off))131ns
Turn-off Fall Time (tf)210ns
Turn-on Switching Loss (Eon)1.1mJ
Turn-off Switching Loss (Eoff)0.9mJ
Total Switching Loss (Ets)2.0mJ
Input Capacitance (Cies)1320pFVCE=25V, VGE=0V, f = 1MHz
Output Capacitance (Coes)57pF
Reverse Transfer Capacitance (Cres)11pF
Electrical Characteristics of Diode
Diode Forward Voltage (VF)2.1 - 3.5VIF=15A
Diode Reverse Recovery Time (trr)130nsVCE = 600V, IF= 15A, diF/dt = 200A/us
Diode peak Reverse Recovery Current (Irr)4.8A
Diode Reverse Recovery Charge (Qrr)220nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.


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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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