insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology
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Product Description
Product Overview
The IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for applications such as motor drives, PTC, and OBC.
Product Attributes
- Brand: HUAXUANYANG
- Origin: HXY ELECTRONICS CO.,LTD
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Key Characteristics | Value | Unit |
| VCES | Collector-Emitter Voltage | 1200 | V |
| IC | Collector Current @TC=25C | 120 | A |
| IC | Collector Current @TC=100C | 60 | A |
| VCE(sat).typ | Collector-Emitter Saturation Voltage (Typ) | 1.65 | V |
| PD | Power Dissipation @TC=25C | 652 | W |
| TJmax, Tstg | Operating Junction and Storage Temperature Range | 55 to 175 | |
| RJC | Junction-to-Case (IGBT) | 0.23 | /W |
| RJC | Junction-to-Case (Diode) | 0.44 | /W |
| RJA | Junction-to-Ambient | 40 | /W |
| VGE(TH) | Gate Threshold Voltage (Typ) | 5.3 | V |
| ICES | Collector-Emitter Leakage Current @VCE=1200V, VGE=0V (Max) | 10 | A |
| Cies | Input Capacitance (Typ) | 6557 | pF |
| Qg | Gate charge (Typ) | 502 | nC |
| td(on) | Turn-on Delay Time (Typ) @TJ=25C | 39 | ns |
| tr | Rise Time (Typ) @TJ=25C | 46 | ns |
| td(off) | Turn-Off Delay Time (Typ) @TJ=25C | 280 | ns |
| tf | Fall Time (Typ) @TJ=25C | 198 | ns |
| Eon | Turn-On Switching Loss (Typ) @TJ=25C | 2.20 | mJ |
| Eoff | Turn-Off Switching Loss (Typ) @TJ=25C | 2.90 | mJ |
| Trr | Reverse Recovery Time (Typ) @TJ=25C | 44 | ns |
| Qrr | Reverse Recovery Charge (Typ) @TJ=25C | 130 | nC |
| Irrm | Reverse Recovery Current (Typ) @TJ=25C | 4.8 | A |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina