Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability

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Product Description

Insulated Gate Bipolar Transistor DGTD120T40S1PT

The DGTD120T40S1PT is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as PTC, motor drives, and onboard chargers (OBC).

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: DGTD120T40S1PT
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Package Type: TO-247
Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)

Technical Specifications

Parameter	Value	Unit	Description
VCES	1200	V	Collector-Emitter Voltage
IC (@TC=25C)	80	A	Collector Current
IC (@TC=100C)	40	A	Collector Current
ICM	160	A	Pulsed Collector Current, tp limited by TJmax
VCE(sat).typ (@IC=40A, VGE=15V, TJ=25C)	1.70	V	Collector-Emitter Saturation Voltage
VGE(TH) (@IC=1mA)	4.3 - 6.3	V	Gate Threshold Voltage
PD (@TC=25C)	441	W	Power Dissipation
TJmax, Tstg	-55 to 175		Operating Junction and Storage Temperature Range
RJC (IGBT)	0.34	/W	Junction-to-Case (IGBT)
RJA	40	/W	Junction-to-Ambient
Cies (@VCE=25V, f=1.0MHz)	3980	pF	Input Capacitance
Qg (@VCC=960V, ICE=40A, VGE=15V)	346	nC	Gate charge
td(on) (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	25	ns	Turn-on Delay Time
tr (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	28	ns	Rise Time
td(off) (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	262	ns	Turn-Off Delay Time
tf (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	149	ns	Fall Time
Eon (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	1.30	mJ	Turn-On Switching Loss
Eoff (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	2.30	mJ	Turn-Off Switching Loss
Ets (@IC=40A, VCC=600V, VGE=15V, Rg=5, TJ=25C)	3.60	mJ	Total Switching Loss
Trr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C)	94	ns	Reverse Recovery Time
Qrr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C)	225	nC	Reverse Recovery Charge
Irrm (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25C)	9.7	A	Reverse Recovery Current