IGBT Module JIAENSEMI JNG50T120LIS2 Featuring High Speed Switching and Energy Saving Characteristics

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.

Product Attributes

Brand: JIAEN
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Conditions	Value	Units
Collector-Emitter Voltage (VCES)		1200	V
Gate-Emitter Voltage (VGES)		+ 20	V
Continuous Collector Current (IC)	TC=25	100	A
Continuous Collector Current (IC)	TC=100	50	A
Pulsed Collector Current (ICM)	Note 1	150	A
Diode Continuous Forward Current (IF)	TC=100	50	A
Diode Maximum Forward Current (IFM)	Note 1	150	A
Short Circuit Withstand Time (tsc)		10	us
Maximum Power Dissipation (PD)	TC=25	329	W
Maximum Power Dissipation (PD)	TC=100	131	W
Operating Junction Temperature Range (TJ)		-40 to +150
Storage Temperature Range (TSTG)		-40 to +150
Thermal Resistance, Junction to case (Rth j-c)	for IGBT	0.38	/ W
Thermal Resistance, Junction to case (Rth j-c)	for Diode	0.5	/ W
Thermal Resistance, Junction to Ambient (Rth j-a)		25	/ W
Collector-Emitter Breakdown Voltage (BVCES)	VGE= 0V, IC= 250uA	1200	V
Collector-Emitter Leakage Current (ICES)	VCE= 1200V, VGE= 0V	-	100 uA
Gate Leakage Current, Forward (IGES)	VGE= + 20V, VCE= 0V	-	+ 100 nA
Gate Threshold Voltage (VGE(th))	VGE= VCE, IC= 250uA	4.5 - 6.5	V
Collector-Emitter Saturation Voltage (VCE(sat))	VGE=15V, IC= 50A	1.8	V
Total Gate Charge (Qg)	VCC=960V VGE=15V IC=50A	243	nC
Gate-Emitter Charge (Qge)		64	nC
Gate-Collector Charge (Qgc)		104	nC
Turn-on Delay Time (td(on))	VCC=600V VGE=15V IC=50A RG=15 Inductive Load TC=25	94	ns
Turn-on Rise Time (tr)		98	ns
Turn-off Delay Time (td(off))		435	ns
Turn-off Fall Time (tf)		187	ns
Turn-on Switching Loss (Eon)		4.3	mJ
Turn-off Switching Loss (Eoff)		3.6	mJ
Total Switching Loss (Ets)		7.9	mJ
Input Capacitance (Cies)	VCE=25V VGE=0V f = 100KHz	7330	pF
Output Capacitance (Coes)		219	pF
Reverse Transfer Capacitance (Cres)		49	pF
Diode Forward Voltage (VF)	IF=50A	2.2 - 3.5	V
Diode Reverse Recovery Time (trr)	VCE = 600V IF= 50A diF/dt = 900A/us	1020	ns
Diode peak Reverse Recovery Current (IRR)		28	A
Diode Reverse Recovery Charge (QRR)		6312	nC