power switching device JIAENSEMI JNG40T120HS IGBT with square RBSOA and soft current turn off waveform

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Product Description

JNG40T120HS IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.

Product Attributes

Brand: JIAEN
Model: JNG40T120HS
Package: TO247

Technical Specifications

Parameter	Condition	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
Collector-Emitter Voltage (VCES)				1200	V
Gate-Emitter Voltage (VGES)				±30	V
Continuous Collector Current (IC)	(TC=25 )			80	A
Continuous Collector Current (IC)	(TC=100)			40	A
Pulsed Collector Current (ICM)	(Note 1)			90	A
Diode Continuous Forward Current (IF)	(TC=100 )			40	A
Diode Maximum Forward Current (IFM)	(Note 1)			90	A
Short Circuit Withstand Time (tsc)				10	us
Maximum Power Dissipation (PD)	(TC=25 )			300	W
Maximum Power Dissipation (PD)	(TC=100)			110	W
Operating Junction Temperature Range (TJ)		-55		150
Storage Temperature Range (TSTG)		-55		150
Thermal Characteristics
Thermal Resistance, Junction to case for IGBT (Rth j-c)				0.42	/ W
Thermal Resistance, Junction to case for Diode (Rth j-c)				0.8	/ W
Thermal Resistance, Junction to Ambient (Rth j-a)				40	/ W
Electrical Characteristics (TC=25 unless otherwise noted)
Collector-Emitter Breakdown Voltage (BVCES)	VGE= 0V, IC= 250uA	1200	-	-	V
Collector-Emitter Leakage Current (ICES)	VCE= 1200V, VGE= 0V	-	-	100	uA
Gate Leakage Current, Forward (IGES)	VGE=30V, VCE= 0V	-	-	100	nA
Gate Leakage Current, Reverse (IGES)	VGE= -30V, VCE= 0V	-	-	100	nA
Gate Threshold Voltage (VGE(th))	VGE= VCE, IC= 250uA	4.5	-	6.5	V
Collector-Emitter Saturation Voltage (VCE(sat))	VGE=15V, IC= 40A	-	2.1	-	V
Total Gate Charge (Qg)	VCC=600V VGE=15V IC=40A	-	107	-	nC
Gate-Emitter Charge (Qge)		-	36	-	nC
Gate-Collector Charge (Qgc)		-	58	-	nC
Turn-on Delay Time (td(on))	VCC=600V VGE=15V IC=40A RG=15Ω Inductive Load TC=25 °C	-	87	-	ns
Turn-on Rise Time (tr)		-	231	-	ns
Turn-off Delay Time (td(off))		-	158	-	ns
Turn-off Fall Time (tf)		-	139	-	ns
Turn-on Switching Loss (Eon)		-	6.1	-	mJ
Turn-off Switching Loss (Eoff)		-	2.1	-	mJ
Total Switching Loss (Ets)		-	8.2	-	mJ
Input Capacitance (Cies)	VCE=25V VGE=0V f = 1MHz	-	3000	-	pF
Output Capacitance (Coes)		-	80	-	pF
Reverse Transfer Capacitance (Cres)		-	30	-	pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
Diode Forward Voltage (VF)	IF=40A	-	1.7	2.7	V
Diode Reverse Recovery Time (trr)	VCE = 600V IF= 40A dIF/dt = 250A/us	-	326	-	ns
Diode peak Reverse Recovery Current (IRR)		-	15.6	-	A
Diode Reverse Recovery Charge (QRR)		-	2843	-	nC