Power transistor HXY MOSFET IKW50N60H3-HXY designed for enhanced switching efficiency and durability

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Product Description

Product Overview

The IKW50N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy capability. It is designed for applications such as UPS, motor drives, and boost converters, offering reliability and ruggedness.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: IKW50N60H3
Package Type: TO-247
Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Website: www.hxymos.com

Technical Specifications

Parameter	Value	Unit	Description
VCES	650	V	Collector-Emitter Voltage
IC (@TC=25C)	100	A	Collector Current
IC (@TC=100C)	50	A	Collector Current
ICM	200	A	Pulsed Collector Current, tp limited by TJmax
IF (@TC=25C)	100	A	Diode Continuous Forward Current
IF (@TC=100C)	50	A	Diode Continuous Forward Current
IFM	200	A	Diode Maximum Forward Current, limited by TJmax
VGES	30	V	Gate-Emitter Voltage
tSC	4	s	Short circuit withstand time (VGE=15V, VCC400V)
PD (@TC=25C)	300	W	Power Dissipation
TJmax, Tstg	-55 to 175		Operating Junction and Storage Temperature Range
TL	260		Maximum Temperature for Soldering
RJC (IGBT)	0.50	/W	Junction-to-Case (IGBT)
RJC (Diode)	0.65	/W	Junction-to-Case (Diode)
RJA	40	/W	Junction-to-Ambient
VCE(sat).typ (@TJ=25C)	1.65	V	Collector-Emitter Saturation Voltage (Typ.)
VGE(TH)	4.5 - 6.5	V	Gate Threshold Voltage (Min. - Max.)
VF (@IF=50A, TJ=25C)	1.45	V	Diode Forward Voltage (Typ.)
ICES (@VCE=650V, VGE=0V)	10	A	Collector-Emitter Leakage Current (Max.)
IGES(F) (@VGE=+20V)	100	nA	Gate-Emitter Forward Leakage Current (Max.)
IGES(R) (@VGE=-20V)	-100	nA	Gate-Emitter Reverse Leakage Current (Max.)
Cies (@VCE=25V, f=1.0MHz)	3363	pF	Input Capacitance (Typ.)
Coes (@VCE=25V, f=1.0MHz)	206	pF	Output Capacitance (Typ.)
Cres (@VCE=25V, f=1.0MHz)	92	pF	Reverse Transfer Capacitance (Typ.)
Qg (@VCC=520V, ICE=50A, VGE=15V)	179	nC	Gate charge (Typ.)
Qge (@VCC=520V, ICE=50A, VGE=15V)	31	nC	Gate-emitter charge (Typ.)
Qgc (@VCC=520V, ICE=50A, VGE=15V)	87	nC	Gate-collector charge (Typ.)
IC(SC) (@VGE=15V, VCC400V, tSC4s,TJ175C)	469	A	Short circuit collector current (Max.)
td(on) (@TJ=25C)	24	ns	Turn-on Delay Time (Typ.)
tr (@TJ=25C)	86	ns	Rise Time (Typ.)
td(off) (@TJ=25C)	122	ns	Turn-Off Delay Time (Typ.)
tf (@TJ=25C)	74	ns	Fall Time (Typ.)
Eon (@TJ=25C)	1.38	mJ	Turn-On Switching Loss (Typ.)
Eoff (@TJ=25C)	1.14	mJ	Turn-Off Switching Loss (Typ.)
Ets (@TJ=25C)	2.52	mJ	Total Switching Loss (Typ.)
td(on) (@TJ=175C)	33	ns	Turn-on Delay Time (Typ.)
tr (@TJ=175C)	97	ns	Rise Time (Typ.)
td(off) (@TJ=175C)	146	ns	Turn-Off Delay Time (Typ.)
tf (@TJ=175C)	84	ns	Fall Time (Typ.)
Eon (@TJ=175C)	1.65	mJ	Turn-On Switching Loss (Typ.)
Eoff (@TJ=175C)	1.32	mJ	Turn-Off Switching Loss (Typ.)
Ets (@TJ=175C)	2.97	mJ	Total Switching Loss (Typ.)
Trr (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s)	98	ns	Reverse Recovery Time (Typ.)
Qrr (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s)	1580	C	Reverse Recovery Charge (Typ.)
Irrm (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s)	26	A	Reverse Recovery Current (Typ.)
Trr (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s)	104	ns	Reverse Recovery Time (Typ.)
Qrr (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s)	1640	C	Reverse Recovery Charge (Typ.)
Irrm (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s)	27	A	Reverse Recovery Current (Typ.)