switching component JIAENSEMI JNG60T65HJU1 Trench IGBT for UPS and soft switching power electronics
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Product Description
Product Overview
The JNG60T65HJU1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for UPS, induction converters, uninterruptible power supplies, and other soft switching applications. Key features include soft current turn-off waveforms and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
| Collector-Emitter Voltage (VCES) | 650 | V | |
| Gate-Emitter Voltage (VGES) | +20 | V | |
| Continuous Collector Current (IC) | 120 | A | TC=25 |
| Continuous Collector Current (IC) | 60 | A | TC=100 |
| Pulsed Collector Current (ICM) | 240 | A | Note 1 |
| Diode Continuous Forward Current (IF) | 60 | A | TC=100 |
| Diode Maximum Forward Current (IFM) | 240 | A | Note 1 |
| Maximum Power Dissipation (PD) | 394 | W | TC=25 |
| Maximum Power Dissipation (PD) | 197 | W | TC=100 |
| Operating Junction Temperature Range (TJ) | -40 to +175 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to case (Rth j-c) for IGBT | 0.38 | / W | |
| Thermal Resistance, Junction to case (Rth j-c) for Diode | 0.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 50 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 to 6.0 | V | VGE= VCE, IC= 1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.9 | V | VGE=15V, IC= 60A |
| Total Gate Charge (Qg) | 120 | nC | VCC=520V VGE=15V IC=60A |
| Turn-on Delay Time (td(on)) | 44 | ns | VCC=400V VGE=15V IC=60A RG=10 Inductive Load TC=25 |
| Turn-on Rise Time (tr) | 100 | ns | |
| Turn-off Delay Time (td(off)) | 166 | ns | |
| Turn-off Fall Time (tf) | 75 | ns | |
| Turn-on Switching Loss (Eon) | 2.3 | mJ | |
| Turn-off Switching Loss (Eoff) | 1.3 | mJ | |
| Total Switching Loss (Ets) | 3.6 | mJ | |
| Input Capacitance (Cies) | 3860 | pF | VCE=30V VGE=0V f = 1MHz |
| Output Capacitance (Coes) | 170 | pF | |
| Reverse Transfer Capacitance (Cres) | 30 | pF | |
| Diode Forward Voltage (VF) | 1.7 | V | IF= 60A |
| Diode Reverse Recovery Time (trr) | 78 | ns | VCE = 400V IF= 60A dif/dt= 450A/ns |
| Diode peak Reverse Recovery Current (Irr) | 14 | A | |
| Diode Reverse Recovery Charge (Qrr) | 600 | nC |
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